Specifications
Emitter-Base Voltage(Vebo) :
1.5V
Current - Collector Cutoff :
30nA
Pd - Power Dissipation :
150mW
Transition frequency(fT) :
25GHz
type :
NPN
Current - Collector(Ic) :
40mA
Collector - Emitter Voltage VCEO :
5V
Operating Temperature :
-55℃~+150℃
Description :
Bipolar (BJT) Transistor NPN 5V 40mA 25GHz 150mW Surface Mount SOT-343-4
Mfr. Part # :
BFP410H6327
Model Number :
BFP410H6327
Package :
SOT-343-4
Description

Product Overview

The BFP410 is a low-noise silicon bipolar RF transistor designed for high-frequency applications. It is suitable for handheld devices, high-frequency oscillators such as DROs for LNBs, and ISM band applications including Automatic Meter Reading and Sensors. This device features a high transit frequency of 25 GHz and is available in a Pb-free and halogen-free package with visible leads. A qualification report according to AEC-Q101 is available. Handle with care as it is an ESD-sensitive device.

Product Attributes

  • Brand: Infineon Technologies
  • Material: Silicon Bipolar
  • Certifications: Pb-free (RoHS compliant), halogen-free, AEC-Q101
  • Package: SOT343

Technical Specifications

Parameter Symbol Value Unit Conditions
Collector-emitter voltage VCEO 4.5 V TA = 25 C
Collector-emitter voltage VCEO 4.1 V TA = -55 C
Collector-emitter voltage VCES 13 V
Collector-base voltage VCBO 13 V
Emitter-base voltage VEBO 1.5 V
Collector current IC 40 mA
Base current IB 6 mA
Total power dissipation Ptot 150 mW TS 100 C
Junction temperature TJ 150 C
Storage temperature TStg -55 ... 150 C
Junction - soldering point thermal resistance RthJS 335 K/W
Collector-emitter breakdown voltage V(BR)CEO 4.5 V IC = 1 mA, IB = 0
Collector-emitter cutoff current ICES 1 nA VCE = 2 V, VBE = 0
Collector-emitter cutoff current ICES 30 nA VCE = 5 V, VBE = 0 , TA = 85 C
Collector-base cutoff current ICBO 1 nA VCB = 2 V, IE = 0
Collector-base cutoff current ICBO 30 nA VCB = 2 V, IE = 0
Emitter-base cutoff current IEBO 0.001 A VEB = 0.5 V, IC = 0
Emitter-base cutoff current IEBO 0.6 A VEB = 0.5 V, IC = 0
DC current gain hFE 60 - IC = 13 mA, VCE = 2 V, pulse measured
DC current gain hFE 95 - IC = 13 mA, VCE = 2 V, pulse measured
DC current gain hFE 130 - IC = 13 mA, VCE = 2 V, pulse measured
Transition frequency fT 18 GHz IC = 20 mA, VCE = 2 V, f = 2 GHz
Transition frequency fT 25 GHz IC = 20 mA, VCE = 2 V, f = 2 GHz
Collector-base capacitance Ccb 0.09 pF VCB = 2 V, f = 1 MHz, VBE = 0 , emitter grounded
Collector-base capacitance Ccb 0.17 pF VCB = 2 V, f = 1 MHz, VBE = 0 , emitter grounded
Collector emitter capacitance Cce 0.35 pF VCE = 2 V, f = 1 MHz, VBE = 0 , base grounded
Emitter-base capacitance Ceb 0.45 pF VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded
Minimum noise figure NFmin 1.2 dB IC = 2 mA, VCE = 2 V, f = 2 GHz, ZS = ZSopt
Power gain, maximum stable Gms 21.5 dB IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 2 GHz
Insertion power gain |S21| 18.5 dB VCE = 2 V, IC = 20 mA, f = 2 GHz, ZS = ZL = 50
Third order intercept point at output IP3 23.5 dBm VCE = 2 V, IC = 20 mA, f = 2 GHz, ZS = ZL = 50
1dB compression point at output P-1dB 10.5 dBm IC = 20 mA, VCE = 2 V, ZS = ZL = 50 , f = 2 GHz

2410121927_Infineon-BFP410H6327_C138768.pdf

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Low noise silicon bipolar RF transistor Infineon BFP410H6327 suitable for high frequency applications

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Emitter-Base Voltage(Vebo) :
1.5V
Current - Collector Cutoff :
30nA
Pd - Power Dissipation :
150mW
Transition frequency(fT) :
25GHz
type :
NPN
Current - Collector(Ic) :
40mA
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Low noise silicon bipolar RF transistor Infineon BFP410H6327 suitable for high frequency applications

Hefei Purple Horn E-Commerce Co., Ltd.

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1 Years
anhui, hefei
Since 2009
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Manufacturer, Distributor/Wholesaler, Agent, Importer
Employee Number :
300~500
Certification Level :
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