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Low noise NPN RF Transistor Infineon BFR 193L3 E6327 with RoHS compliance and AEC Q101 certification
Low noise NPN RF Transistor Infineon BFR 193L3 E6327 with RoHS compliance and AEC Q101 certification
Specifications
Emitter-Base Voltage(Vebo) :
2V
Current - Collector Cutoff :
100nA
Pd - Power Dissipation :
580mW
Transition frequency(fT) :
8GHz
type :
NPN
Current - Collector(Ic) :
80mA
Collector - Emitter Voltage VCEO :
12V
Operating Temperature :
-55℃~+150℃
Description :
Bipolar (BJT) Transistor NPN 12V 80mA 8GHz 580mW Surface Mount TSLP-3
Mfr. Part # :
BFR 193L3 E6327
Model Number :
BFR 193L3 E6327
Package :
TSLP-3
Description

Product Overview

The BFR193L3 is an NPN Bipolar RF Transistor designed for low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers. It features a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 1 dB at 900 MHz. This device is Pb-free (RoHS compliant) and has an AEC-Q101 qualification report available. It is an ESD sensitive device and requires careful handling.

Product Attributes

  • Brand: Infineon Technologies
  • Certifications: RoHS compliant, AEC-Q101
  • Package: TSLP-3-1

Technical Specifications

ParameterSymbolValueUnitNotes
Maximum Ratings
Collector-emitter voltageVCEO12V
Collector-emitter voltageVCES20V
Collector-base voltageVCBO20V
Emitter-base voltageVEBO2V
Collector currentIC80mA
Base currentIB10mA
Total power dissipationPtot580mWTS 89C
Junction temperatureTJ150C
Storage temperatureTStg-55 ... 150C
Thermal Resistance Junction - soldering pointRthJS105K/W
DC Characteristics
Collector-emitter breakdown voltageV(BR)CEO12VIC = 1 mA, IB = 0
Collector-emitter cutoff currentICES100AVCE = 20 V, VBE = 0
Collector-base cutoff currentICBO100nAVCB = 10 V, IE = 0
Emitter-base cutoff currentIEBO1AVEB = 1 V, IC = 0
DC current gainhFE70 - 140-IC = 30 mA, VCE = 8 V, pulse measured
AC Characteristics
Transition frequencyfT6 - 8GHzIC = 50 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitanceCcb0.63 - 0.9pFVCB = 10 V, f = 1 MHz, VBE = 0, emitter grounded
Collector emitter capacitanceCce0.22pFVCE = 10 V, f = 1 MHz, VBE = 0, base grounded
Emitter-base capacitanceCeb2.25pFVEB = 0.5 V, f = 1 MHz, VCB = 0, collector grounded
Minimum noise figureNFmin1 - 1.6dBIC = 10 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz / 1.8 GHz
Power gain, maximum availableGma19 - 12.5-IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 900 MHz / 1.8 GHz
Transducer gain|S21e|14.5 - 9dBIC = 30 mA, VCE = 8 V, ZS = ZL = 50, f = 900 MHz / 1.8 GHz

2410121815_Infineon-BFR-193L3-E6327_C534134.pdf

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Low noise NPN RF Transistor Infineon BFR 193L3 E6327 with RoHS compliance and AEC Q101 certification

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Product Detail
Emitter-Base Voltage(Vebo) :
2V
Current - Collector Cutoff :
100nA
Pd - Power Dissipation :
580mW
Transition frequency(fT) :
8GHz
type :
NPN
Current - Collector(Ic) :
80mA
Contact Supplier
Low noise NPN RF Transistor Infineon BFR 193L3 E6327 with RoHS compliance and AEC Q101 certification

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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