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Silicon npn rf bipolar transistor Infineon BFR360FH6327XTSA1 offering high gain and low noise for rf
Silicon npn rf bipolar transistor Infineon BFR360FH6327XTSA1 offering high gain and low noise for rf
Specifications
Emitter-Base Voltage(Vebo) :
2V
Current - Collector Cutoff :
30nA
Pd - Power Dissipation :
210mW
Transition frequency(fT) :
14GHz
type :
NPN
Number :
1 NPN
Current - Collector(Ic) :
35mA
Collector - Emitter Voltage VCEO :
6V
Description :
Bipolar (BJT) Transistor NPN 6V 35mA 14GHz 210mW TSFP-4-1
Mfr. Part # :
BFR360FH6327XTSA1
Model Number :
BFR360FH6327XTSA1
Package :
TSFP-4-1
Description

Product Overview

The BFR360F is a low-noise, low-current, and low-voltage silicon NPN RF bipolar transistor from Infineon's third-generation RF bipolar transistor family. It is designed for low current amplifiers and offers cost competitiveness with ease of use. Its key features include a minimum noise figure of 1 dB at 1.8 GHz, high gain, and a high OIP3, making it suitable for applications like LNAs for FM/AM radio and sub-1 GHz ISM band applications.

Product Attributes

  • Brand: Infineon
  • Material: Silicon
  • Certifications: Qualified for industrial applications according to JEDEC47/20/22

Technical Specifications

ParameterSymbolValuesUnitNote or test condition
Minimum noise figureNFmin1dBat 1.8 GHz, 3 V, 3 mA
High gainGma15.5dBat 1.8 GHz, 3 V, 15 mA
3rd order intercept point at outputOIP324dBmat 1.8 GHz, 3 V, 15 mA, ZS = ZL = 50
Collector emitter breakdown voltageV(BR)CEO6VIC = 1 mA, IB = 0, open base
DC current gainhFE90 - 160-VCE = 3 V, IC = 15 mA, pulse measured
Transition frequencyfT11 - 14GHzVCE = 3 V, IC = 15 mA, f = 1 GHz
Collector base capacitanceCCB0.32 - 0.5pFVCB = 5 V, VBE = 0, f = 1 MHz, emitter grounded
Maximum power dissipationPtot210mWTS 98 C
Junction temperatureTJ150C-
Storage temperatureTStg-55 - 150C-

2407291003_Infineon-BFR360FH6327XTSA1_C7433391.pdf

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Silicon npn rf bipolar transistor Infineon BFR360FH6327XTSA1 offering high gain and low noise for rf

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Product Detail
Emitter-Base Voltage(Vebo) :
2V
Current - Collector Cutoff :
30nA
Pd - Power Dissipation :
210mW
Transition frequency(fT) :
14GHz
type :
NPN
Number :
1 NPN
Contact Supplier
Silicon npn rf bipolar transistor Infineon BFR360FH6327XTSA1 offering high gain and low noise for rf

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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