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Low noise silicon bipolar RF transistor Infineon BFR183E6327HTSA1 for high gain broadband amplifiers
Low noise silicon bipolar RF transistor Infineon BFR183E6327HTSA1 for high gain broadband amplifiers
Specifications
Emitter-Base Voltage(Vebo) :
2V
Current - Collector Cutoff :
100nA
Pd - Power Dissipation :
450mW
Transition frequency(fT) :
8GHz
type :
NPN
Current - Collector(Ic) :
65mA
Collector - Emitter Voltage VCEO :
12V
Description :
450mW NPN 65mA 12V SOT-23-3 Single Bipolar Transistors RoHS
Mfr. Part # :
BFR183E6327HTSA1
Model Number :
BFR183E6327HTSA1
Package :
SOT-23-3
Description

Product Overview

The BFR183 is a low-noise silicon bipolar RF transistor designed for high-gain broadband amplifiers. It operates at collector currents ranging from 2 mA to 30 mA, offering a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. This device is Pb-free, RoHS compliant, and a qualification report according to AEC-Q101 is available. It is an ESD-sensitive device and requires careful handling.

Product Attributes

  • Brand: Infineon Technologies
  • Package: SOT23
  • Certifications: Pb-free (RoHS compliant), AEC-Q101 available

Technical Specifications

Parameter Symbol Value Unit Conditions
Collector-emitter voltage VCEO 12 V
Collector-emitter voltage VCES 20 V
Collector-base voltage VCBO 20 V
Emitter-base voltage VEBO 2 V
Collector current IC 65 mA
Base current IB 5 mA
Total power dissipation Ptot 450 mW TS 60 C
Junction temperature TJ 150 C
Storage temperature TStg -55 ... 150 C
Thermal Resistance Junction - soldering point RthJS 200 K/W
Collector-emitter breakdown voltage V(BR)CEO 12 V IC = 1 mA, IB = 0
Collector-emitter cutoff current ICES 100 A VCE = 20 V, VBE = 0
Collector-base cutoff current ICBO 100 nA VCB = 10 V, IE = 0
Emitter-base cutoff current IEBO 1 A VEB = 1 V, IC = 0
DC current gain hFE 70 - 140 - IC = 15 mA, VCE = 8 V, pulse measured
Transition frequency fT 6 - 8 GHz IC = 25 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance Ccb 0.37 - 0.57 pF VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded
Collector emitter capacitance Cce 0.2 pF VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded
Emitter-base capacitance Ceb 1.1 pF VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded
Minimum noise figure NFmin 0.9 - 1.4 dB IC = 5 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz / 1.8 GHz
Power gain, maximum stable Gms 17.5 dB IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz
Power gain, maximum available Gma 11.5 dB IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz
Transducer gain |S21e| 14.5 - 9 dB IC = 15 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz / 1.8 MHz

2410121811_Infineon-BFR183E6327HTSA1_C3040063.pdf

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Low noise silicon bipolar RF transistor Infineon BFR183E6327HTSA1 for high gain broadband amplifiers

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Product Detail
Emitter-Base Voltage(Vebo) :
2V
Current - Collector Cutoff :
100nA
Pd - Power Dissipation :
450mW
Transition frequency(fT) :
8GHz
type :
NPN
Current - Collector(Ic) :
65mA
Contact Supplier
Low noise silicon bipolar RF transistor Infineon BFR183E6327HTSA1 for high gain broadband amplifiers

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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