ISC Silicon NPN Power Transistor 2SC3709A
The ISC 2SC3709A is a Silicon NPN Power Transistor designed for high current switching applications. It features a low collector saturation voltage (VCE(sat)= 0.4V(Max)@IC= 6A) and good linearity of hFE. This transistor is a complement to the 2SA1451A type.
Product Attributes
- Brand: ISC
- Registered Trademark: ISC & ISCsemi
- Material: Silicon
- Type: NPN Power Transistor
- Complementary Type: 2SA1451A
Technical Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
| Collector-Emitter Breakdown Voltage (V(BR)CEO) | IC= 50mA ; IB= 0 | | | 50 | V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | IC= 6A; IB= 0.3A | | | 0.4 | V |
| Base-Emitter Saturation Voltage (VBE(sat)) | IC= 6A; IB= 0.3A | | | 1.2 | V |
| Collector Cutoff Current (ICBO) | VCB= 60V; IE= 0 | | | 10 | A |
| Emitter Cutoff Current (IEBO) | VEB= 6V; IC= 0 | | | 10 | A |
| DC Current Gain (hFE-1) | IC= 1A; VCE= 1V | 70 | | 240 | |
| DC Current Gain (hFE-2) | IC= 6A; VCE= 1V | 40 | | | |
| Output Capacitance (COB) | IE= 0; VCB= 10V; ftest= 1MHz | | | 180 | pF |
| Current-GainBandwidth Product (fT) | IC= 1A; VCE= 5V | | 90 | | MHz |
| Turn-on Time (ton) | IB1= -IB2= 0.3A, RL= 5; VCC30V | | | 0.2 | s |
| Storage Time (tstg) | IB1= -IB2= 0.3A, RL= 5; VCC30V | | 1.0 | | s |
| Fall Time (tf) | IB1= -IB2= 0.3A, RL= 5; VCC30V | | | 0.2 | s |
Absolute Maximum Ratings
| Symbol | Parameter | Value | Unit |
| VCBO | Collector-Base Voltage | 60 | V |
| VCEO | Collector-Emitter Voltage | 50 | V |
| VEBO | Emitter-Base Voltage | 6 | V |
| IC | Collector Current-Continuous | 12 | A |
| ICP | Pulse Collector Current | 30 | A |
| IB | Base Current-Continuous | 2 | A |
| PC | Collector Power Dissipation @ TC=25 | 30 | W |
| TJ | Junction Temperature | 150 | |
| Tstg | Storage Temperature Range | -55~150 | |
2411220046_ISC-2SC3709A_C5128633.pdf