MachineU > China Products
Low noise broadband amplifier silicon bipolar RF transistor Infineon BFR93AE6327HTSA1 with high gain
Low noise broadband amplifier silicon bipolar RF transistor Infineon BFR93AE6327HTSA1 with high gain
Specifications
Current - Collector Cutoff :
100nA
Pd - Power Dissipation :
300mW
Transition frequency(fT) :
6GHz
type :
NPN
Current - Collector(Ic) :
90mA
Collector - Emitter Voltage VCEO :
12V
Operating Temperature :
-55℃~+150℃
Description :
Bipolar (BJT) Transistor NPN 12V 90mA 6GHz 300mW Surface Mount SOT-23-3
Mfr. Part # :
BFR93AE6327HTSA1
Model Number :
BFR93AE6327HTSA1
Package :
SOT-23-3
Description

Product Overview

The BFR93A is a low-noise silicon bipolar RF transistor designed for low-noise, high gain broadband amplifiers. It is suitable for collector currents ranging from 2 mA to 30 mA and is Pb-free (RoHS compliant). This device is ESD sensitive and requires careful handling.

Product Attributes

  • Brand: Infineon Technologies
  • Package: SOT23
  • Certifications: AEC-Q101 available
  • Compliance: Pb-free (RoHS compliant)

Technical Specifications

ParameterSymbolValueUnitNotes
Maximum Ratings
Collector-emitter voltageVCEO12V
Collector-emitter voltageVCES20V
Collector-base voltageVCBO20V
Emitter-base voltageVEBO2V
Collector currentIC90mA
Base currentIB30mA
Total power dissipationPtot300mWTS 111 C
Junction temperatureTJ150C
Storage temperatureTStg-55 ... 150C
Thermal Resistance
Junction - soldering pointRthJS130K/WTS is measured on the collector lead at the soldering point to the pcb
Electrical Characteristics
Collector-emitter breakdown voltageV(BR)CEO12VIC = 1 mA, IB = 0
Collector-emitter cutoff currentICES100AVCE = 20 V, VBE = 0
Collector-base cutoff currentICBO100nAVCB = 10 V, IE = 0
Emitter-base cutoff currentIEBO10AVEB = 2.5 V, IC = 0
DC current gainhFE70 - 140-IC = 30 mA, VCE = 8 V, pulse measured
Transition frequencyfT4.5 - 6GHzIC = 30 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitanceCcb0.54 - 0.8pFVCB = 10 V, f = 1 MHz, VBE = 0, emitter grounded
Collector emitter capacitanceCce0.25pFVCE = 10 V, f = 1 MHz, VBE = 0, base grounded
Emitter-base capacitanceCeb1.9pFVEB = 0.5 V, f = 1 MHz, VCB = 0, collector grounded
Minimum noise figureNFmin1.5 - 2.6dBIC = 5 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz / 1.8 GHz
Power gain, maximum availableGma14.5 - 9.5dBIC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 900 MHz / 1.8 GHz
Transducer gain|S21e|12.5 - 7dBIC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz / 1.8 MHz
Third order intercept point at outputIP315dBmIC = 30mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz
1dB Compression pointP-1dB6dBmIC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz

2410121848_Infineon-BFR93AE6327HTSA1_C513260.pdf

Send your message to this supplier
Send Now

Low noise broadband amplifier silicon bipolar RF transistor Infineon BFR93AE6327HTSA1 with high gain

Ask Latest Price
Product Detail
Current - Collector Cutoff :
100nA
Pd - Power Dissipation :
300mW
Transition frequency(fT) :
6GHz
type :
NPN
Current - Collector(Ic) :
90mA
Collector - Emitter Voltage VCEO :
12V
Contact Supplier
Low noise broadband amplifier silicon bipolar RF transistor Infineon BFR93AE6327HTSA1 with high gain

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
Discover similar products
View More

Find Similar Products By Category:

Supplier Homepage Products Single Bipolar Transistors
MachineU China Products
Contact Supplier
Submit Requirement