MachineU > China Products > Electrical Equipment & Supplies
High Linearity Bipolar RF Transistor Silicon Germanium Type Infineon BFP650H6327 with SOT343 Package
High Linearity Bipolar RF Transistor Silicon Germanium Type Infineon BFP650H6327 with SOT343 Package
Specifications
Emitter-Base Voltage(Vebo) :
1.2V
Current - Collector Cutoff :
40nA
Pd - Power Dissipation :
500mW
Transition frequency(fT) :
42GHz
type :
NPN
Number :
1 NPN
Current - Collector(Ic) :
150mA
Collector - Emitter Voltage VCEO :
4V
Operating Temperature :
-55℃~+150℃
Description :
Bipolar (BJT) Transistor NPN 4V 150mA 42GHz 500mW Surface Mount SOT-343-4
Mfr. Part # :
BFP650H6327
Model Number :
BFP650H6327
Package :
SOT-343-4
Description

BFP650 High Linearity Silicon Germanium Bipolar RF Transistor

The BFP650 is a high linearity silicon germanium bipolar RF transistor designed for RF and protection device applications. This datasheet provides detailed technical specifications, maximum ratings, thermal characteristics, and electrical characteristics, including DC and AC parameters, along with characteristic diagrams and simulation data. The product is supplied in a SOT343 package.

Product Attributes

  • Brand: Infineon Technologies AG
  • Material: Silicon Germanium Bipolar
  • Package: SOT343

Technical Specifications

ParameterValueUnitNotes
Product NameBFP650High Linearity Silicon Germanium Bipolar RF Transistor
Revision1.12012-09-13
Maximum Collector Current (IC)100mA
Maximum Collector-Emitter Voltage (VCE)5V
Maximum Base Current (IB)10mA
Maximum Base-Emitter Voltage (VEB)-5VReverse
Maximum Power Dissipation (Ptot)300mWat TA = 25 C
Transition Frequency (fT)> 60GHzat IC = 70 mA, VCE = 3 V
Gain (Gmax)> 15dBat f = 2.4 GHz, VCE = 3 V, IC = 70 mA
Noise Figure (NFmin)< 1.0dBat f = 2.4 GHz, VCE = 3 V, IC = 30 mA
Noise Figure (NF50)< 1.2dBat f = 2.4 GHz, VCE = 3 V, IC = 30 mA, ZS = 50
3rd Order Intercept Point (OIP3)> 35dBmat f = 2.4 GHz, VCE = 3 V, IC = 70 mA, ZS = ZL = 50

2410121500_Infineon-BFP650H6327_C151520.pdf

Send your message to this supplier
Send Now

High Linearity Bipolar RF Transistor Silicon Germanium Type Infineon BFP650H6327 with SOT343 Package

Ask Latest Price
Product Detail
Emitter-Base Voltage(Vebo) :
1.2V
Current - Collector Cutoff :
40nA
Pd - Power Dissipation :
500mW
Transition frequency(fT) :
42GHz
type :
NPN
Number :
1 NPN
Contact Supplier
High Linearity Bipolar RF Transistor Silicon Germanium Type Infineon BFP650H6327 with SOT343 Package

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Single FETs, MOSFETs, Bridge Rectifiers, Single Bipolar Transistors
Employee Number :
300~500
Certification Level :
Verified Supplier
Discover similar products
View More

Find Similar Products By Category:

Supplier Homepage Products Single Bipolar Transistors
MachineU China Products Electrical Equipment & Supplies
Contact Supplier
Submit Requirement