MachineU > China Products
Low saturation voltage PNP bipolar transistor WILLSEMI WPT2E33-3TR for charging circuit applications
Low saturation voltage PNP bipolar transistor WILLSEMI WPT2E33-3TR for charging circuit applications
Specifications
Emitter-Base Voltage(Vebo) :
6V
Current - Collector Cutoff :
100nA
DC Current Gain :
100@1A,2V
Transition frequency(fT) :
-
Number :
1 PNP
Vce Saturation(VCE(sat)) :
400mV@2A,200mA
type :
PNP
Pd - Power Dissipation :
1.5W
Current - Collector(Ic) :
3A
Collector - Emitter Voltage VCEO :
30V
Operating Temperature :
-
Description :
Bipolar (BJT) Transistor PNP 30V 3A 1.5W Surface Mount SOT-89-3L
Mfr. Part # :
WPT2E33-3/TR
Model Number :
WPT2E33-3/TR
Package :
SOT-89-3L
Description

Product Overview

The WPT2E33 is a single PNP bipolar power transistor from Will Semiconductor Ltd. It features a very low saturation voltage and is suitable for charging circuits and other power management applications in portable equipment. This device is Pb-free.

Product Attributes

  • Brand: Will Semiconductor Ltd.
  • Product Code: WPT2E33
  • Certification: Pb-free
  • Package: SOT-89-3L
  • Marking: WPT2E33 YYWW (YY=Year, WW=Week)

Technical Specifications

ParameterSymbolTest ConditionsMin.Typ.Max.Unit
Collector-emitter voltageVCEO-30V
Collector-base voltageVCBO-30V
Emitter-base voltageVEBO-6V
Continues collector current (a)IC-3A
Continues collector current (b)IC-2A
Pulse collector current (c)ICM-6A
Power dissipation (a)PD3.0W
Power dissipation (b)PD1.5W
Junction TemperatureTJ150C
Lead TemperatureTL260C
Storage Temperature RangeTstg-55155C
Collector-emitter breakdown voltageBVCEOIC=-10mA, IB=0mA-30V
Collector-base breakdown voltageBVCBOIC=-1mA, IE=0mA-30V
Emitter-base breakdown voltageBVEBOIE=-100uA, IC=0mA-6V
Collector cutoff currentICBOVCB=-30V-100nA
Emitter cutoff currentIEBOVEB=-5V-100nA
Collector-emitter saturation voltage (c)VCE(sat)IC=-2A, IB=-200mA-0.2-0.4V
Base-emitter saturation voltage (c)VBE(sat)IC=-2A, IB=-200mA-1.0-1.5V
Base-emitter forward voltageVBE(on)IC=-0.5A, VCE=-2V-0.7-1.0V
DC current gain (c)hFEIC=-1A , VCE=-2V100300

2410121453_WILLSEMI-WPT2E33-3-TR_C240199.pdf

Send your message to this supplier
Send Now

Low saturation voltage PNP bipolar transistor WILLSEMI WPT2E33-3TR for charging circuit applications

Ask Latest Price
Product Detail
Emitter-Base Voltage(Vebo) :
6V
Current - Collector Cutoff :
100nA
DC Current Gain :
100@1A,2V
Transition frequency(fT) :
-
Number :
1 PNP
Vce Saturation(VCE(sat)) :
400mV@2A,200mA
Contact Supplier
Low saturation voltage PNP bipolar transistor WILLSEMI WPT2E33-3TR for charging circuit applications

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
Discover similar products
View More

Find Similar Products By Category:

Supplier Homepage Products Single Bipolar Transistors
MachineU China Products
Contact Supplier
Submit Requirement