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General Purpose NPN Transistor Nexperia BC850CW 115 Designed for Tape Recorders and Hi Fi Amplifiers
General Purpose NPN Transistor Nexperia BC850CW 115 Designed for Tape Recorders and Hi Fi Amplifiers
Specifications
Emitter-Base Voltage(Vebo) :
5V
Current - Collector Cutoff :
15nA
Pd - Power Dissipation :
200mW
Transition frequency(fT) :
100MHz
type :
NPN
Number :
1 NPN
Current - Collector(Ic) :
100mA
Collector - Emitter Voltage VCEO :
45V
Operating Temperature :
-65℃~+150℃
Description :
Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 200mW Surface Mount SOT-323
Mfr. Part # :
BC850CW,115
Model Number :
BC850CW,115
Package :
SOT-323
Description

Product Overview

The BC849W and BC850W are NPN general purpose transistors designed for low current (max. 100 mA) and low voltage (max. 45 V) applications. They are particularly suitable for low noise stages in tape recorders, hi-fi amplifiers, and other audio-frequency equipment. These transistors are housed in a SOT323 plastic package. PNP complements include the BC859W and BC860W.

Product Attributes

  • Brand: Nexperia (formerly NXP Semiconductors)
  • Package Type: SOT323
  • Transistor Type: NPN General Purpose
  • PNP Complements: BC859W, BC860W

Technical Specifications

Model Marking Code Collector-Base Voltage (VCBO) (V) Collector-Emitter Voltage (VCEO) (V) Emitter-Base Voltage (VEBO) (V) Collector Current (IC) (mA) Peak Collector Current (ICM) (mA) Peak Base Current (IBM) (mA) Total Power Dissipation (Ptot) (mW) Storage Temperature (Tstg) (C) Junction Temperature (Tj) (C) Operating Ambient Temperature (Tamb) (C) Thermal Resistance (Rth j-a) (K/W) Collector Cut-off Current (ICBO) (nA) Emitter Cut-off Current (IEBO) (nA) DC Current Gain (hFE) Collector-Emitter Saturation Voltage (VCEsat) (mV) Base-Emitter Voltage (VBE) (mV) Collector Capacitance (Cc) (pF) Emitter Capacitance (Ce) (pF) Transition Frequency (fT) (MHz) Noise Figure (F) (dB)
BC849W - -30 -30 -5 -100 -200 -200 -200 (Tamb 25 C, note 1) -65 to +150 -150 -65 to +150 625 (note 1) -15 (IE=0; VCB=30V)
-5 (IE=0; VCB=30V; Tj=150C)		 -100 (IC=0; VEB=5V) - - - - - - -
BC850W - -50 -45 -5 -100 -200 -200 -200 (Tamb 25 C, note 1) -65 to +150 -150 -65 to +150 625 (note 1) -15 (IE=0; VCB=30V)
-5 (IE=0; VCB=30V; Tj=150C)		 -100 (IC=0; VEB=5V) - - - - - - -
BC849BW 2B* -30 -30 -5 -100 -200 -200 -200 (Tamb 25 C, note 1) -65 to +150 -150 -65 to +150 625 (note 1) -15 (IE=0; VCB=30V)
-5 (IE=0; VCB=30V; Tj=150C)		 -100 (IC=0; VEB=5V) 200 - 450 (IC=2mA; VCE=5V) -250 (IC=10mA; IB=0.5mA)
-600 (IC=100mA; IB=5mA; note 1)		 580 - 700 (IC=2mA; VCE=5V)
-770 (IC=10mA; VCE=5V)		 -3 (VCB=10V; f=1MHz) -11 (VEB=500mV; f=1MHz) 100 (IC=10mA; VCE=5V; f=100MHz) -4 (IC=200A; VCE=5V; RS=2k; f=10Hz to 15.7kHz)
-4 (IC=200A; VCE=5V; RS=2k; f=1kHz; B=200Hz)
BC849CW 2C* -30 -30 -5 -100 -200 -200 -200 (Tamb 25 C, note 1) -65 to +150 -150 -65 to +150 625 (note 1) -15 (IE=0; VCB=30V)
-5 (IE=0; VCB=30V; Tj=150C)		 -100 (IC=0; VEB=5V) 420 - 800 (IC=2mA; VCE=5V) -250 (IC=10mA; IB=0.5mA)
-600 (IC=100mA; IB=5mA; note 1)		 580 - 700 (IC=2mA; VCE=5V)
-770 (IC=10mA; VCE=5V)		 -3 (VCB=10V; f=1MHz) -11 (VEB=500mV; f=1MHz) 100 (IC=10mA; VCE=5V; f=100MHz) -4 (IC=200A; VCE=5V; RS=2k; f=10Hz to 15.7kHz)
-4 (IC=200A; VCE=5V; RS=2k; f=1kHz; B=200Hz)
BC850BW 2F* -50 -45 -5 -100 -200 -200 -200 (Tamb 25 C, note 1) -65 to +150 -150 -65 to +150 625 (note 1) -15 (IE=0; VCB=30V)
-5 (IE=0; VCB=30V; Tj=150C)		 -100 (IC=0; VEB=5V) 200 - 450 (IC=2mA; VCE=5V) -250 (IC=10mA; IB=0.5mA)
-600 (IC=100mA; IB=5mA; note 1)		 580 - 700 (IC=2mA; VCE=5V)
-770 (IC=10mA; VCE=5V)		 -3 (VCB=10V; f=1MHz) -11 (VEB=500mV; f=1MHz) 100 (IC=10mA; VCE=5V; f=100MHz) -4 (IC=200A; VCE=5V; RS=2k; f=10Hz to 15.7kHz)
-4 (IC=200A; VCE=5V; RS=2k; f=1kHz; B=200Hz)
BC850CW 2G* -50 -45 -5 -100 -200 -200 -200 (Tamb 25 C, note 1) -65 to +150 -150 -65 to +150 625 (note 1) -15 (IE=0; VCB=30V)
-5 (IE=0; VCB=30V; Tj=150C)		 -100 (IC=0; VEB=5V) 420 - 800 (IC=2mA; VCE=5V) -250 (IC=10mA; IB=0.5mA)
-600 (IC=100mA; IB=5mA; note 1)		 580 - 700 (IC=2mA; VCE=5V)
-770 (IC=10mA; VCE=5V)		 -3 (VCB=10V; f=1MHz) -11 (VEB=500mV; f=1MHz) 100 (IC=10mA; VCE=5V; f=100MHz) -4 (IC=200A; VCE=5V; RS=2k; f=10Hz to 15.7kHz)
-4 (IC=200A; VCE=5V; RS=2k; f=1kHz; B=200Hz)

Note 1: Transistor mounted on an FR4 printed-circuit board.

Note: * = - : Made in Hong Kong. * = t : Made in Malaysia.

Dimensions (mm):

A1 bp c D E e1 HE Lp Q w v
0.1 1.1 0.8 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15
0.65 1.3 2.2 2.0 0.23 0.13 0.2 0.2 0.45 0.15 -

Pin Description:

  • 1: base
  • 2: emitter
  • 3: collector

2410121940_Nexperia-BC850CW-115_C135825.pdf

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General Purpose NPN Transistor Nexperia BC850CW 115 Designed for Tape Recorders and Hi Fi Amplifiers

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Product Detail
Emitter-Base Voltage(Vebo) :
5V
Current - Collector Cutoff :
15nA
Pd - Power Dissipation :
200mW
Transition frequency(fT) :
100MHz
type :
NPN
Number :
1 NPN
Contact Supplier
General Purpose NPN Transistor Nexperia BC850CW 115 Designed for Tape Recorders and Hi Fi Amplifiers

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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