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Nexperia PBSS2515YPN 115 Low VCEsat NPN PNP Transistor Pair in SOT363 Package for Driver Applications
Nexperia PBSS2515YPN 115 Low VCEsat NPN PNP Transistor Pair in SOT363 Package for Driver Applications
Specifications
Emitter-Base Voltage(Vebo) :
6V
Current - Collector Cutoff :
100nA
Pd - Power Dissipation :
300mW
Transition frequency(fT) :
420MHz
type :
NPN+PNP
Number :
1 NPN + 1 PNP
Current - Collector(Ic) :
500mA
Collector - Emitter Voltage VCEO :
15V
Operating Temperature :
-65℃~+150℃
Description :
Bipolar (BJT) Transistor NPN+PNP 15V 500mA 420MHz 300mW TSSOP-6(SOT-363)
Mfr. Part # :
PBSS2515YPN,115
Model Number :
PBSS2515YPN,115
Package :
TSSOP-6(SOT-363)
Description

PBSS2515YPN: 15 V Low VCEsat NPN/PNP Transistor

Product Overview

The PBSS2515YPN is a low VCEsat NPN/PNP transistor pair designed for general-purpose switching and driver circuits. This device offers high current capability and a low collector-emitter saturation voltage, providing significant advantages in terms of reduced PCB area and lower pick-and-place costs by replacing two discrete SC-70 packaged transistors. Its compact SOT363 (SC-88) SMD plastic package makes it ideal for battery-driven equipment and other space-constrained applications.

Product Attributes

  • Brand: Nexperia
  • Package Type: SOT363 (SC-88)
  • Transistor Type: NPN/PNP Pair

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
VCEO Collector-emitter voltage Open base - - 15 V
ICM Peak collector current Single pulse; tp 1 ms - - 1 A
RCEsat Collector-emitter saturation resistance IC = 500 mA; IB = 50 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - 300 500 m
IC = -500 mA; IB = -50 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - 300 500 m
VCBO Collector-base voltage Open emitter - - 15 V
VEBO Emitter-base voltage Open collector - - 6 V
IC Collector current - - - 500 mA
IBM Peak base current Single pulse; tp 1 ms - - 100 mA
Ptot Total power dissipation Tamb 25 C - - 200 mW
Tamb 25 C [1] - - 300 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - 150 C
Tstg Storage temperature - -65 - 150 C
Thermal characteristics
Rth(j-a) Thermal resistance from junction to ambient In free air [1] - - 416 K/W
Characteristics (TR1 - NPN)
hFE DC current gain VCE = 2 V; IC = 10 mA; Tamb = 25 C 200 - - -
- - VCE = 2 V; IC = 100 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C 150 - - -
- - VCE = 2 V; IC = 500 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C 90 - - -
VCEsat Collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA; Tamb = 25 C - - 25 mV
- - IC = 200 mA; IB = 10 mA; Tamb = 25 C - - 150 mV
- - IC = 500 mA; IB = 50 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - - 250 mV
VBEsat Base-emitter saturation voltage IC = 500 mA; IB = 50 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - - 1.1 V
VBEon Base-emitter turn-on voltage VCE = 2 V; IC = 100 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - - 0.9 V
fT Transition frequency VCE = 5 V; IC = 100 mA; f = 100 MHz; Tamb = 25 C 250 420 - MHz
Cc Collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - 4.4 6 pF
Characteristics (TR2 - PNP)
hFE DC current gain VCE = -2 V; IC = -10 mA; Tamb = 25 C -200 - - -
- - VCE = -2 V; IC = -100 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C -150 - - -
- - VCE = -2 V; IC = -500 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C -90 - - -
VCEsat Collector-emitter saturation voltage IC = -10 mA; IB = -0.5 mA; Tamb = 25 C - - -25 mV
- - IC = -200 mA; IB = -10 mA; Tamb = 25 C - - -150 mV
- - IC = -500 mA; IB = -50 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - - -250 mV
VBEsat Base-emitter saturation voltage IC = -500 mA; IB = -50 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - - -1.1 V
VBEon Base-emitter turn-on voltage VCE = -2 V; IC = -100 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - - -0.9 V
fT Transition frequency VCE = -5 V; IC = -100 mA; f = 100 MHz; Tamb = 25 C 100 280 - MHz
Cc Collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 10 pF

Applications

  • General purpose switching and muting
  • Low frequency driver circuits
  • LCD backlighting
  • Supply line switching circuits
  • Battery driven equipment (mobile phones, video cameras and hand-held devices)

Ordering Information

Type number Package Name Description
PBSS2515YPN TSSOP6 Plastic, surface-mounted package; 6 leads; 0.65 mm pitch; 2.1 mm x 1.25 mm x 0.95 mm body

Marking

Type number Marking code
PBSS2515YPN N8%

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.


2410010131_Nexperia-PBSS2515YPN-115_C456107.pdf

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Nexperia PBSS2515YPN 115 Low VCEsat NPN PNP Transistor Pair in SOT363 Package for Driver Applications

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Product Detail
Emitter-Base Voltage(Vebo) :
6V
Current - Collector Cutoff :
100nA
Pd - Power Dissipation :
300mW
Transition frequency(fT) :
420MHz
type :
NPN+PNP
Number :
1 NPN + 1 PNP
Contact Supplier
Nexperia PBSS2515YPN 115 Low VCEsat NPN PNP Transistor Pair in SOT363 Package for Driver Applications

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Single FETs, MOSFETs, Bridge Rectifiers, Single Bipolar Transistors
Employee Number :
300~500
Certification Level :
Verified Supplier
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