This power transistor is designed for power amplification, TV sound output, and frame output applications. It is complementary to the C2073. Key features include high voltage ratings and significant power dissipation capabilities, making it suitable for demanding electronic circuits.
| Parameter Symbol | Symbol | Description | Minimum | Typical | Maximum | Unit | Test Conditions |
|---|---|---|---|---|---|---|---|
| Limit Values (Ta=25) | |||||||
| Storage Temperature | Tstg | -55 | 150 | ||||
| Junction Temperature | Tj | 150 | |||||
| Collector Power Dissipation (Ta=25) | PC | 1.5 | W | ||||
| Collector Power Dissipation (Tc=25) | PC | 25 | W | ||||
| Collector-Base Voltage | VCBO | -150 | V | ||||
| Collector-Emitter Voltage | VCEO | -150 | V | ||||
| Emitter-Base Voltage | VEBO | -5 | V | ||||
| Collector Current | IC | -1.2 | A | ||||
| Base Current | IB | -0.5 | A | ||||
| Electrical Parameters (Ta=25) | |||||||
| Collector-Base Breakdown Voltage | BVCBO | 150 | V | IC=100A, IE=0 | |||
| Collector-Emitter Breakdown Voltage | BVCEO | 150 | V | IC=10mA, IB=0 | |||
| Emitter-Base Breakdown Voltage | BVEBO | 5 | V | IE=1mA, IC=0 | |||
| Collector Cut-off Current | ICBO | -10 | A | VCB=-120V, IE=0 | |||
| Emitter Cut-off Current | IEBO | -10 | A | VEB=-5V, IC=0 | |||
| DC Current Gain | hFE | 100 | 210 | VCE=-5V, IC=-500mA | |||
| Collector-Emitter Saturation Voltage | VCEsat | -1.5 | V | IC=-1A, IB=-100mA | |||
| Characteristic Frequency | fT | 55 | MHz | VCE=-10V, IC=-500mA | |||
| Common-Base Output Capacitance | Cob | 4 | pF | VCB=-10V, IE=0, f=1MHz | |||
| Pin Configuration | |||||||
| 1 | B | Base | |||||
| 2 | C | Collector | |||||
| 3 | E | Emitter | |||||
Notes:
Contact Information:
Shenzhen Minos Technology Co., Ltd. (Headquarters)
Address: 22B-22C, Tianmian City Building, 4026 Shennan Middle Road, Huafu Street, Futian District, Shenzhen, China
Postal Code: 518025
Tel: 0755-83273777