The GSBC807W is a PNP Transistor housed in a SOT-323 small outline plastic package. It is designed for automatic insertion and features an epitaxial planar die construction. This transistor is suitable for various electronic applications requiring PNP functionality.
| Parameter | Symbol | Conditions | Min. | Max. | Unit |
| Collector-Base Breakdown Voltage | V(BR)CBO | IC=-10A, IE=0 | -50 | - | V |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC=-10mA, IB=0 | -45 | - | V |
| Emitter-Base Breakdown Voltage | V(BR)EBO | IE=-1A, IC=0 | -5 | - | V |
| Collector Cut-Off Current | ICBO | VCB=-20V, IE=0 | - | -100 | nA |
| Emitter Cut-Off Current | IEBO | VEB=-5V, IC=0 | - | -100 | nA |
| DC Current Gain (hFE) | hFE(1) | VCE=-1V, IC=-100mA | 100 | 600 | |
| DC Current Gain (hFE) | hFE(2) | VCE=-1V, IC=-500mA | 40 | - | |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=-500mA, IB=-50mA | - | -0.70 | V |
| Base-Emitter Voltage | VBE(on) | VCE=-1V, IC=-500mA | - | -1.20 | V |
| Transition Frequency | fT | VCE=-5V, IC=-10mA, f=100MHz | 80 | - | MHz |
| Collector Output Capacitance | Cob | VCB=-10V, IE=0, f=100MHz | - | 10 | pF |
| Collector Power Dissipation | PC | (TA=25C unless otherwise specified) | - | 200 | mW |
| Thermal Resistance Junction To Ambient | RJA | - | 625 | C/W | |
| Storage Temperature | TSTG | -55 | +150 | C | |
| Junction Temperature | TJ | -55 | +150 | C |