The GSBCX51, GSBCX52, and GSBCX53 are PNP transistors designed for low voltage, high current applications. They serve as medium power general-purpose devices and are suitable for driver stages in audio amplifiers. These transistors are NPN complements to the GSBCX54, GSBCX55, and GSBCX56 series.
| Parameter | Symbol | GSBCX51 | GSBCX52 | GSBCX53 | Unit | Test Conditions |
| Collector-Emitter Voltage | VCEO | -45 | -60 | -100 | V | IC=-10mA, IB=0 |
| Collector-Base Voltage | VCBO | -45 | -60 | -80 | V | IE=-100A, IC=0 |
| Emitter-Base Voltage | VEBO | -5 | -5 | -5 | V | IC=0 |
| Collector Current | IC | -1 | -1 | -1 | A | |
| Collector Power Dissipation | PC | 500 | 500 | 500 | mW | TA=25C |
| Junction Temperature | TJ | 150 | 150 | 150 | ||
| Storage Temperature | TSTG | -55 to +150 | -55 to +150 | -55 to +150 | ||
| Thermal Resistance Junction To Ambient | RJA | 250 | 250 | 250 | /W | |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -45 | -60 | -80 | V | IC=-10mA, IB=0 |
| Collector-Base Breakdown Voltage | V(BR)CBO | -45 | -60 | -100 | V | IC=-100A, IE=0 |
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | -5 | -5 | V | VEB=-5V,IC=0 |
| DC Current Gain | hFE(1) | 63 | 63 | 63 | VCE=-5V,IC=-10mA , f=100MHz | |
| DC Current Gain | hFE(2) | 63-250 | 63-160 | 100-250 | VCE=-2V, IC=-0.5A | |
| DC Current Gain | hFE(3) | 40 | 40 | 40 | IC=-0.5A,IB=-50mA | |
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.5 | -0.5 | -0.5 | V | IC=-0.5A,IB=-50mA |
| Base -Emitter Voltage | VBE | -1 | -1 | -1 | V | VCE=-2V, IC=-0.5A |
| Transition Frequency | fT | 50 | 50 | 50 | MHz | VCE=-2V, IC=-150mA |
| Collector Cut- Off Current | ICBO | -0.1 | -0.1 | -0.1 | A | VCB=-30V,IE=0 |
| Emitter Cut-Off Current | IEBO | -0.1 | -0.1 | -0.1 | A | IE=-100A,IC=0 |