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High speed high voltage transistor WeEn PHE13005127 for in electronic lighting ballast applications
High speed high voltage transistor WeEn PHE13005127 for in electronic lighting ballast applications
Specifications
Emitter-Base Voltage(Vebo) :
9V
Current - Collector Cutoff :
100uA
DC Current Gain :
10@2A,5V
Transition frequency(fT) :
-
Vce Saturation(VCE(sat)) :
1V@4A,1A
type :
NPN
Pd - Power Dissipation :
75W
Current - Collector(Ic) :
4A
Collector - Emitter Voltage VCEO :
400V
Operating Temperature :
-
Description :
Bipolar (BJT) Transistor NPN 400V 4A 75W Through Hole TO-220AB
Mfr. Part # :
PHE13005,127
Model Number :
PHE13005,127
Package :
TO-220AB
Description

Product Overview

The PHE13005 is a high voltage, high speed NPN planar-passivated power switching transistor designed for electronic lighting ballast applications. It offers fast switching and high voltage capability, making it suitable for demanding electronic lighting systems.

Product Attributes

  • Brand: WeEn Semiconductors
  • Material: Silicon diffused
  • Package Type: SOT78 (TO-220AB)

Technical Specifications

SymbolParameterConditionsValuesUnit
Absolute Maximum Ratings
VCESMPeak collector-emitter voltageVBE = 0 V700V
VCBOCollector-base voltageIE = 0 A700V
VCEOCollector-emitter voltageIB = 0 A400V
ICCollector current (DC)DC; Fig. 1; Fig. 2; Fig. 44A
ICMPeak collector current8A
IBBase current (DC)2A
IBMPeak base current4A
PtotTotal power dissipationTmb 25 C; Fig. 375W
TstgStorage temperature-65 to 150C
TjJunction temperature150C
VEBOEmitter-base voltageIC = 0 A9V
Static Characteristics
ICESCollector-emitter cut-off currentVBE = -1.5 V; VCE = 700 V; Tmb = 25 C-1 mA
ICESCollector-emitter cut-off currentVBE = -1.5 V; VCE = 700 V; Tj = 125 C-5 mA
ICBOCollector-base cut-off currentVCB = 700 V; IE = 0 A; Tmb = 25 C-1 mA
ICEOCollector-emitter cut-off currentVCEO = 400 V; IB = 0 A; Tmb = 25 C-0.1 mA
IEBOEmitter-base cut-off currentVEB = 9 V; IC = 0 A; Tmb = 25 C-1 mA
VCEOsusCollector-emitter sustaining voltageIB = 0 A; IC = 10 mA; LC = 25 mH; Tmb = 25 C; Fig. 6; Fig. 7400V
VCEsatCollector-emitter saturation voltageIC = 1.0 A; IB = 0.2 A; Tmb = 25 C; Fig. 8; Fig. 9-0.5 V
VCEsatCollector-emitter saturation voltageIC = 2.0 A; IB = 0.5 A; Tmb = 25 C; Fig. 8; Fig. 9-0.6 V
VCEsatCollector-emitter saturation voltageIC = 4.0 A; IB = 1.0 A; Tmb = 25 C; Fig. 8; Fig. 9-1 V
VBEsatBase-emitter saturation voltageIC = 1.0 A; IB = 0.2 A; Tmb = 25 C; Fig. 10-1.2 V
VBEsatBase-emitter saturation voltageIC = 2.0 A; IB = 0.5 A; Tmb = 25 C; Fig. 10-1.6 V
hFEDC current gainIC = 1 A; VCE = 5 V; Tmb = 25 C; Fig. 1112 to 40
hFEDC current gainIC = 2 A; VCE = 5 V; Tmb = 25 C; Fig. 1110 to 28
Dynamic Characteristics
tsStorage timeIC = 2 A; IBon = 0.4 A; IBoff = -0.4 A; RL = 75 ; Tmb = 25 C; resistive load; Fig. 12; Fig. 13-4 s
tsStorage timeIC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 H; Tmb = 25 C; inductive load; Fig. 14; Fig. 15-2 s
tsStorage timeIC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 H; Tmb = 100 C; inductive load; Fig. 14; Fig. 15-4 s
tfFall timeIC = 2 A; IBon = 0.4 A; IBoff = -0.4 A; RL = 75 ; Tmb = 25 C; resistive load; Fig. 12; Fig. 13-0.9 s
tfFall timeIC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 H; Tmb = 25 C; inductive load; Fig. 14; Fig. 15-0.5 s
tfFall timeIC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 H; Tmb = 100 C; inductive load; Fig. 14; Fig. 15-0.9 s
Thermal Characteristics
Rth(j-mb)Thermal resistance from junction to mounting baseFig. 5-1.67 K/W
Rth(j-a)Thermal resistance from junction to ambientin free air-60 K/W

2408021544_WeEn-PHE13005-127_C78890.pdf

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High speed high voltage transistor WeEn PHE13005127 for in electronic lighting ballast applications

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Product Detail
Emitter-Base Voltage(Vebo) :
9V
Current - Collector Cutoff :
100uA
DC Current Gain :
10@2A,5V
Transition frequency(fT) :
-
Vce Saturation(VCE(sat)) :
1V@4A,1A
type :
NPN
Contact Supplier
High speed high voltage transistor WeEn PHE13005127 for in electronic lighting ballast applications

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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