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WeEn PHD13003C 412 NPN Power Transistor Featuring Integrated Diode for Electronic Lighting Ballasts
WeEn PHD13003C 412 NPN Power Transistor Featuring Integrated Diode for Electronic Lighting Ballasts
Specifications
Current - Collector Cutoff :
100uA
DC Current Gain :
-
Transition frequency(fT) :
-
Number :
1 NPN
Vce Saturation(VCE(sat)) :
1.5V@1.5A,0.5A
type :
NPN
Pd - Power Dissipation :
2.1W
Current - Collector(Ic) :
1.5A
Collector - Emitter Voltage VCEO :
400V
Operating Temperature :
-
Description :
Bipolar (BJT) Transistor NPN 400V 1.5A 2.1W Through Hole TO-92
Mfr. Part # :
PHD13003C,412
Model Number :
PHD13003C,412
Package :
TO-92
Description

WeEn Semiconductors PHD13003C NPN Power Transistor with Integrated Diode

The PHD13003C is a high voltage, high speed, planar passivated NPN power switching transistor featuring an integrated anti-parallel emitter-collector diode. It is designed for applications requiring fast switching, high DC current gain, and high voltage capability, such as compact fluorescent lamps (CFL), low power electronic lighting ballasts, and off-line self-oscillating power supplies (SOPS) for battery charging.

Product Attributes

  • Brand: WeEn Semiconductors
  • Package: SOT54 (TO-92)

Technical Specifications

SymbolParameterConditionsMinTypMaxUnit
General Description
ICCollector current (DC)---1.5A
PtotTotal power dissipationTlead 25 C; see Figure 1--2.1W
VCESMCollector-emitter peak voltageVBE = 0 V--700V
Static Characteristics
hFEDC current gainIC = 0.5 A; VCE = 2 V; Tj = 25 C81725-
ICESCollector-emitter cut-off currentVBE = 0 V; VCE = 700 V--1mA
ICEOCollector-emitter cut-off currentVBE = 0 V; VCE = 700 V; Tj = 100 C--5mA
VCEOsusCollector-emitter sustaining voltageIB = 0 A; IC = 1 mA; LC = 25 mH; Tlead = 25 C; see Figure 3; see Figure 4400--V
VCEsatCollector-emitter saturation voltageIC = 0.5 A; IB = 0.1 A; Tlead = 25 C--0.5V
VBEsatBase-emitter saturation voltageIC = 0.5 A; IB = 0.1 A; Tlead = 25 C--1V
VFForward voltageIF = 0.5 A; Tj = 25 C--1.5V
Dynamic Characteristics
tonTurn-on timeIC = 1 A; IBon = 0.2 A; IBoff = -0.2 A; RL = 75 ; Tlead = 25 C; resistive load; see Figure 5; see Figure 6--1s
tsStorage timeIC = 1 A; IBon = 0.2 A; VBB = -5 V; LB = 1 H; Tlead = 25 C; inductive load; see Figure 7; see Figure 8-0.8-s
tfFall timeIC = 1 A; IBon = 0.2 A; IBoff = -0.2 A; RL = 75 ; Tlead = 25 C; resistive load; see Figure 5; see Figure 6--0.7s
Thermal Characteristics
Rth(j-lead)Thermal resistance from junction to leadsee Figure 2--60K/W
Rth(j-a)Thermal resistance from junction to ambientin free air; printed-circuit board mounted; lead length = 4 mm-150-K/W

2410121840_WeEn-PHD13003C-412_C253557.pdf

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WeEn PHD13003C 412 NPN Power Transistor Featuring Integrated Diode for Electronic Lighting Ballasts

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Product Detail
Current - Collector Cutoff :
100uA
DC Current Gain :
-
Transition frequency(fT) :
-
Number :
1 NPN
Vce Saturation(VCE(sat)) :
1.5V@1.5A,0.5A
type :
NPN
Contact Supplier
WeEn PHD13003C 412 NPN Power Transistor Featuring Integrated Diode for Electronic Lighting Ballasts

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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