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Planar passivated power transistor WeEn PHE13003A 412 suitable for compact fluorescent lamps and inverter
Planar passivated power transistor WeEn PHE13003A 412 suitable for compact fluorescent lamps and inverter
Specifications
Current - Collector Cutoff :
-
DC Current Gain :
7.5@800mA,5V
Transition frequency(fT) :
-
Vce Saturation(VCE(sat)) :
400mV
type :
NPN
Pd - Power Dissipation :
2.1W
Current - Collector(Ic) :
1A
Collector - Emitter Voltage VCEO :
400V
Operating Temperature :
-
Description :
Bipolar (BJT) Transistor NPN 400V 1A 2.1W Through Hole TO-92
Mfr. Part # :
PHE13003A,412
Model Number :
PHE13003A,412
Package :
TO-92
Description

Product Overview

The PHE13003A is a high voltage, high speed, planar passivated NPN power switching transistor designed for various electronic applications. It offers fast switching, high voltage capability, and very low switching and conduction losses, making it suitable for compact fluorescent lamps (CFL), electronic lighting ballasts, inverters, and off-line self-oscillating power supplies.

Product Attributes

  • Brand: WeEn Semiconductors
  • Package Type: SOT54 (TO-92)

Technical Specifications

SymbolParameterConditionsMinTypMaxUnit
Static characteristics
ICEScollector-emitter cut-off current (base shorted)VBE = 0 V; VCE = 700 V; Tj = 125 C--5mA
IEBOemitter-base cut-off current (collector open)VEB = 9 V; IC = 0 A; Tlead = 25 C--1mA
VCEOsuscollector-emitter sustaining voltage (base open)IB = 0 A; IC = 1 mA; LC = 25 mH; Tlead = 25 C; Fig. 4; Fig. 5400--V
VCEsatcollector-emitter saturation voltageIC = 0.25 A; IB = 50 mA; Tlead = 25 C; Fig. 6-0.20.5V
IC = 0.5 A; IB = 125 mA; Tlead = 25 C; Fig. 6-0.31V
IC = 0.75 A; IB = 250 mA; Tlead = 25 C; Fig. 6-0.41.5V
VBEsatbase-emitter saturation voltageIC = 0.25 A; IB = 50 mA; Tlead = 25 C; Fig. 7--1V
IC = 0.5 A; IB = 125 mA; Tlead = 25 C; Fig. 7--1.2V
hFEDC current gainIC = 0.5 mA; VCE = 2 V; Tlead = 25 C; Fig. 8; Fig. 912--
IC = 0.4 A; VCE = 5 V; Tlead = 25 C; Fig. 8; Fig. 910-30
IC = 0.8 A; VCE = 5 V; Tlead = 25 C; Fig. 8; Fig. 957.520
Dynamic characteristics
tffall timeIC = 1 A; IBon = 200 mA; VBB = -5 V; LB = 1 H; Tlead = 25 C; inductive load; Fig. 10; Fig. 11-80-ns
Limiting values
VCESMcollector-emitter peak voltageVBE = 0 V--700V
VCBOcollector-base voltageIE = 0 A--700V
VCEOcollector-emitter voltageIB = 0 A--400V
VEBOemitter-base voltageIC = 0 A; I(Emitter) = 10 mA--9V
ICcollector current DC; Fig. 1--1A
ICMpeak collector current--2A
IBbase current DC--0.5A
IBMpeak base current--1A
Ptottotal power dissipationTlead 25 C; Fig. 2--2.1W
Tstgstorage temperature-65-150C
Tjjunction temperature--150C
Thermal characteristics
Rth(j-lead)thermal resistance from junction to leadFig. 3--60K/W
Rth(j-a)thermal resistance from junction to ambient free airprinted circuit board mounted; lead length = 4 mm-150-K/W

2410010400_WeEn-PHE13003A-412_C256389.pdf

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Planar passivated power transistor WeEn PHE13003A 412 suitable for compact fluorescent lamps and inverter

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Product Detail
Current - Collector Cutoff :
-
DC Current Gain :
7.5@800mA,5V
Transition frequency(fT) :
-
Vce Saturation(VCE(sat)) :
400mV
type :
NPN
Pd - Power Dissipation :
2.1W
Contact Supplier
Planar passivated power transistor WeEn PHE13003A 412 suitable for compact fluorescent lamps and inverter

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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