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WeEn BUJ100LR 412 high voltage NPN transistor for in CFL electronic ballasts and inverter applications
WeEn BUJ100LR 412 high voltage NPN transistor for in CFL electronic ballasts and inverter applications
Specifications
Current - Collector Cutoff :
1mA
DC Current Gain :
10@400mA,5V
Transition frequency(fT) :
-
Vce Saturation(VCE(sat)) :
400mV
type :
NPN
Pd - Power Dissipation :
2.1W
Current - Collector(Ic) :
1A
Collector - Emitter Voltage VCEO :
400V
Operating Temperature :
-
Description :
10@400mA,5V NPN 2.1W 1A 400V TO-92-3 Single Bipolar Transistors RoHS
Mfr. Part # :
BUJ100LR,412
Model Number :
BUJ100LR,412
Package :
TO-92-3
Description

WeEn Semiconductors BUJ100LR NPN Power Transistor

The BUJ100LR is a high voltage, high speed, planar passivated NPN power switching transistor designed for various electronic applications. It offers fast switching, high voltage capability, and very low switching and conduction losses, making it suitable for compact fluorescent lamps (CFL), electronic lighting ballasts, inverters, and off-line self-oscillating power supplies.

Product Attributes

  • Brand: WeEn Semiconductors
  • Product Type: NPN power transistor
  • Package: SOT54 (TO-92)

Technical Specifications

ParameterConditionsMinTypMaxUnit
Collector-Emitter Peak Voltage (VCESM)VBE = 0 V--700V
Collector-Base Voltage (VCBO)IE = 0 A--700V
Collector-Emitter Voltage (VCEO)IB = 0 A--400V
Emitter-Base Voltage (VEBO)IC = 0 A; I(Emitter) = 10 mA--9V
Collector Current (IC)DC; Fig. 1--1A
Peak Collector Current (ICM)---2A
Base Current (IB)DC--0.5A
Peak Base Current (IBM)---1A
Total Power Dissipation (Ptot)Tlead 25 C; Fig. 2--2.1W
Storage Temperature (Tstg)--65-150C
Junction Temperature (Tj)---150C
Thermal Resistance (Rth(j-lead))Fig. 3--60K/W
Thermal Resistance (Rth(j-a))Printed circuit board mounted; lead length 4 mm-150-K/W
Collector-Emitter Cut-off Current (ICES)VBE = 0 V; VCE = 700 V; Tj = 125 C--5mA
Emitter-Base Cut-off Current (IEBO)VEB = 9 V; IC = 0 A; Tlead = 25 C--1mA
Collector-Emitter Sustaining Voltage (VCEOsus)IB = 0 A; IC = 1 mA; LC = 25 mH; Tlead = 25 C; Fig. 4; Fig. 5400--V
Collector-Emitter Saturation Voltage (VCEsat)IC = 0.25 A; IB = 50 mA; Tlead = 25 C; Fig. 6-0.20.5V
Collector-Emitter Saturation Voltage (VCEsat)IC = 0.5 A; IB = 125 mA; Tlead = 25 C; Fig. 6-0.31V
Collector-Emitter Saturation Voltage (VCEsat)IC = 0.75 A; IB = 250 mA; Tlead = 25 C; Fig. 6-0.41.5V
Base-Emitter Saturation Voltage (VBEsat)IC = 0.25 A; IB = 50 mA; Tlead = 25 C; Fig. 7--1V
Base-Emitter Saturation Voltage (VBEsat)IC = 0.5 A; IB = 125 mA; Tlead = 25 C; Fig. 7--1.2V
DC Current Gain (hFE)IC = 0.5 mA; VCE = 2 V; Tlead = 25 C12---
DC Current Gain (hFE)IC = 0.4 A; VCE = 5 V; Tlead = 25 C; Fig. 8; Fig. 9-1030-
DC Current Gain (hFE)IC = 0.8 A; VCE = 5 V; Tlead = 25 C; Fig. 8; Fig. 9-520-
Fall Time (tf)IC = 1 A; IBon = 200 mA; VBB = -5 V; LB = 1 H; Tlead = 25 C; inductive load; Fig. 10; Fig. 11-80-ns

2411220146_WeEn-BUJ100LR-412_C256384.pdf

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WeEn BUJ100LR 412 high voltage NPN transistor for in CFL electronic ballasts and inverter applications

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Product Detail
Current - Collector Cutoff :
1mA
DC Current Gain :
10@400mA,5V
Transition frequency(fT) :
-
Vce Saturation(VCE(sat)) :
400mV
type :
NPN
Pd - Power Dissipation :
2.1W
Contact Supplier
WeEn BUJ100LR 412 high voltage NPN transistor for in CFL electronic ballasts and inverter applications

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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