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Silicon NPN Transistor PANJIT BCX56-16-AU R1 000A1 Low Vce Saturation Voltage Green Molding Compound
Silicon NPN Transistor PANJIT BCX56-16-AU R1 000A1 Low Vce Saturation Voltage Green Molding Compound
Specifications
Emitter-Base Voltage(Vebo) :
6V
Current - Collector Cutoff :
100nA
Pd - Power Dissipation :
1.4W
Transition frequency(fT) :
100MHz
type :
NPN
Current - Collector(Ic) :
1A
Collector - Emitter Voltage VCEO :
100V
Operating Temperature :
-55℃~+150℃
Description :
Bipolar (BJT) Transistor NPN 100V 1A 100MHz 1.4W Surface Mount SOT-89
Mfr. Part # :
BCX56-16-AU_R1_000A1
Model Number :
BCX56-16-AU_R1_000A1
Package :
SOT-89
Description

NPN Low Vce(sat) Transistor - BCX56-16-AU

The BCX56-16-AU is a silicon NPN epitaxial transistor designed for applications requiring low collector-emitter saturation voltage (Vce(sat)). It offers high collector current capability, excellent DC current gain, and is AEC-Q101 qualified, making it suitable for demanding automotive and industrial applications. This device is lead-free and compliant with EU RoHS 2.0, utilizing a green molding compound.

Product Attributes

  • Brand: Panjit International Inc.
  • Certifications: AEC-Q101 qualified, EU RoHS 2.0 compliant, IEC61249 Standard (Green molding compound)
  • Complementary Device: PNP complement: BCX53-16-AU
  • Material: Silicon NPN epitaxial type
  • Color: Green (molding compound)
  • Origin: Not specified

Technical Specifications

ParameterSymbolTest ConditionMin.Typ.Max.Units
Maximum Ratings and Thermal Characteristics
Collector-Base VoltageVCBO120V
Collector-Emitter VoltageVCEO100V
Emitter-Base VoltageVEBO6V
Collector Current (DC)IC1A
Collector Current (Pulse)ICP3A
Power DissipationPD1.4W
Junction TemperatureTJ150°C
Operating Junction and Storage Temperature RangeTJ,TSTG-55~150°C
Thermal Resistance from Junction to AmbientRΘJA(Note)89°C/W
Electrical Characteristics
Collector-Emitter Breakdown VoltageBVCEOIC= 10mA, IB= 0A100--V
Collector-Base Breakdown VoltageBVCBOIC= 0.1mA, IE= 0A120--V
Emitter-Base Breakdown VoltageBVEBOIE= 0.1mA, IC= 0A6--V
Collector Cutoff CurrentICBOVCB= 80V, IE= 0A--100nA
Emitter Cutoff CurrentIEBOVEB= 6V, IC= 0A--100nA
DC Current GainhFEVCE= 2V, IC= 5mA100--
DC Current GainhFEVCE= 2V, IC= 150mA100-250
DC Current GainhFEVCE= 2V, IC= 500mA40--
Collector-Emitter Saturation VoltageVCE(SAT)IC= 0.1A, IB= 10mA-60120mV
Collector-Emitter Saturation VoltageVCE(SAT)IC= 0.5A, IB= 50mA-150350mV
Collector-Emitter Saturation VoltageVCE(SAT)IC= 1A, IB= 0.1A-250500mV
Base-Emitter Saturation voltageVBE(SAT)IC= 0.1A, IB= 10mA--1.0V
Base-Emitter Saturation voltageVBE(SAT)IC= 0.5A, IB= 50mA--1.1V
Transition FrequencyfTVCE= 5V, IE= -50mA100--MHz
Collector Output CapacitanceCOBVCB= 10V, IE= 0A, f=1MHz--10pF

2410121327_PANJIT-BCX56-16-AU-R1-000A1_C5354950.pdf

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Silicon NPN Transistor PANJIT BCX56-16-AU R1 000A1 Low Vce Saturation Voltage Green Molding Compound

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Product Detail
Emitter-Base Voltage(Vebo) :
6V
Current - Collector Cutoff :
100nA
Pd - Power Dissipation :
1.4W
Transition frequency(fT) :
100MHz
type :
NPN
Current - Collector(Ic) :
1A
Contact Supplier
Silicon NPN Transistor PANJIT BCX56-16-AU R1 000A1 Low Vce Saturation Voltage Green Molding Compound

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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