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Space dual transistor NPN NPN CBI BC846B in SOT 23 6L package for optimized electronic device design
Space dual transistor NPN NPN CBI BC846B in SOT 23 6L package for optimized electronic device design
Specifications
Emitter-Base Voltage(Vebo) :
6V
Current - Collector Cutoff :
15nA
Pd - Power Dissipation :
200mW
Transition frequency(fT) :
100MHz
type :
-
Current - Collector(Ic) :
100mA
Collector - Emitter Voltage VCEO :
65V
Operating Temperature :
-
Description :
Bipolar (BJT) Transistor 65V 100mA 100MHz 200mW Surface Mount SOT-23
Mfr. Part # :
BC846B
Model Number :
BC846B
Package :
SOT-23
Description

Product Overview

The Heyuan China Base Electronics Technology Co., Ltd. SOT-23-6L dual transistor offers a compact NPN+NPN configuration, integrating two transistors into a single package. This design significantly reduces component count and board space, while ensuring no mutual interference between the transistors. Ideal for applications requiring space-saving and efficient component integration.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Package Type: SOT-23-6L
  • Configuration: Dual Transistor (NPN+NPN)

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Maximum Ratings (Ta=25 unless otherwise noted)
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO 65 V
Emitter-Base Voltage VEBO 6 V
Collector Current Continuous IC 0.1 A
Collector Dissipation PC 200 mW
Junction Temperature TJ 150
Storage Temperature Tstg -55 150
Electrical Characteristics (Ta=25 unless otherwise specified)
Collector-base breakdown voltage V(BR)CBO IC=10A,IE=0 80 V
Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 65 V
Emitter-base breakdown voltage V(BR)EBO IE=10A,IC=0 6 V
Collector cut-off current ICBO VCB=70V,IE=0 100 nA
Emitter cut-off current IEBO IC=0, VEB=5V 100 nA
DC current gain hFE VCE=5V,IC=2mA 110 200 420
220 450 800
Collector-emitter saturation voltage VCE(sat)(1) IC=10mA,IB=0.5mA 0.25 V
Collector-emitter saturation voltage VCE(sat)(2) IC=100mA,IB=5mA 0.5 V
Base-emitter saturation voltage VBE(sat) IC=100mA,IB=5mA 1.1 V
Transition frequency fT VCB=5V,IE=10mA,f=100MHz 100 MHz
Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 1.5 pF

Marking Codes

Model Marking
BC846AF 4At
BC846BF 4Bt
BC846CF 4Gt

2508261745_CBI-BC846B_C2836093.pdf

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Space dual transistor NPN NPN CBI BC846B in SOT 23 6L package for optimized electronic device design

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Product Detail
Emitter-Base Voltage(Vebo) :
6V
Current - Collector Cutoff :
15nA
Pd - Power Dissipation :
200mW
Transition frequency(fT) :
100MHz
type :
-
Current - Collector(Ic) :
100mA
Contact Supplier
Space dual transistor NPN NPN CBI BC846B in SOT 23 6L package for optimized electronic device design

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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