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High Current NPN Silicon Power Transistor CBI 2SD882PU Designed for Amplification and Switching Uses
High Current NPN Silicon Power Transistor CBI 2SD882PU Designed for Amplification and Switching Uses
Specifications
Emitter-Base Voltage(Vebo) :
5V
Current - Collector Cutoff :
1uA
Pd - Power Dissipation :
1W
Transition frequency(fT) :
90MHz
type :
NPN
Current - Collector(Ic) :
3A
Collector - Emitter Voltage VCEO :
30V
Operating Temperature :
-
Description :
Bipolar (BJT) Transistor NPN 30V 3A 90MHz 1W Surface Mount SOT-89
Mfr. Part # :
2SD882PU
Model Number :
2SD882PU
Package :
SOT-89
Description

Product Overview

The 2SD882U is an NPN Silicon Power Transistor designed for various electronic applications. It is categorized into four groups (R, Q, P, E) based on its DC current gain (hFE). This transistor offers robust performance with high current handling capabilities and defined saturation voltages, making it suitable for power switching and amplification circuits.

Product Attributes

  • Type: NPN Silicon Power Transistor
  • Current Gain Groups: R, Q, P, E
  • Package Outline: SOT-89

Technical Specifications

Parameter Symbol Value Unit Conditions
Absolute Maximum Ratings
Collector to Base Voltage VCBO 40 V
Collector to Emitter Voltage VCEO 30 V
Emitter to Base Voltage VEBO 5 V
Collector Current IC 3 A
Peak Collector Current (t = 10 ms) ICP 7 A
Total power dissipation (Ta = 25 OC) Ptot 1 W (Ta = 25 OC)
Total power dissipation (Tc = 25 OC) Ptot 10 W (Tc = 25 OC)
Junction Temperature Tj 150 OC
Storage Temperature Range Tstg -55 to +150 OC
Characteristics at Ta = 25 OC
DC Current Gain (Group R) hFE 30 - VCE = 2 V, IC = 20 mA
DC Current Gain (Group Q) hFE 60 - VCE = 2 V, IC = 20 mA
DC Current Gain (Group P) hFE 100 - VCE = 2 V, IC = 20 mA
DC Current Gain (Group E) hFE 160 - VCE = 2 V, IC = 20 mA
DC Current Gain (Group R) hFE - 120 VCE = 2 V, IC = 1 A
DC Current Gain (Group Q) hFE - 200 VCE = 2 V, IC = 1 A
DC Current Gain (Group P) hFE - 320 VCE = 2 V, IC = 1 A
DC Current Gain (Group E) hFE - 400 VCE = 2 V, IC = 1 A
Collector Base Cutoff Current ICBO - 1 A VCB = 30 V
Emitter Base Cutoff Current IEBO - 1 A VEB = 3 V
Collector Emitter Saturation Voltage VCE(sat) - 0.5 V IC = 2 A, IB = 0.2 A
Base Emitter Saturation Voltage VBE(sat) - 2 V IC = 2 A, IB = 0.2 A
Gain Bandwidth Product fT - 90 MHz VCE = 5 V, IC = 0.1 A
Output Capacitance Cob - 45 pF VCB = 10 V, f = 1 MHz

2410121434_CBI-2SD882PU_C2828478.pdf

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High Current NPN Silicon Power Transistor CBI 2SD882PU Designed for Amplification and Switching Uses

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Product Detail
Emitter-Base Voltage(Vebo) :
5V
Current - Collector Cutoff :
1uA
Pd - Power Dissipation :
1W
Transition frequency(fT) :
90MHz
type :
NPN
Current - Collector(Ic) :
3A
Contact Supplier
High Current NPN Silicon Power Transistor CBI 2SD882PU Designed for Amplification and Switching Uses

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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