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Electronic Design Transistor CBI MMBTSC4081W NPN Silicon Epitaxial Planar with Robust Maximum Ratings
Electronic Design Transistor CBI MMBTSC4081W NPN Silicon Epitaxial Planar with Robust Maximum Ratings
Specifications
Emitter-Base Voltage(Vebo) :
7V
Current - Collector Cutoff :
100nA
Pd - Power Dissipation :
200mW
Transition frequency(fT) :
180MHz
type :
NPN
Number :
1 NPN
Current - Collector(Ic) :
150mA
Collector - Emitter Voltage VCEO :
50V
Operating Temperature :
-
Description :
Bipolar (BJT) Transistor NPN 50V 150mA 180MHz 200mW Surface Mount SOT-323
Mfr. Part # :
MMBTSC4081W
Model Number :
MMBTSC4081W
Package :
SOT-323
Description

Product Overview

This NPN Silicon Epitaxial Planar Transistor is designed for various electronic applications. It is subdivided into three groups (Q, R, and S) based on its DC current gain, offering flexibility for different circuit requirements. With robust absolute maximum ratings and key electrical characteristics detailed, this transistor provides reliable performance for demanding electronic designs.

Product Attributes

  • Type: NPN Silicon Epitaxial Planar Transistor
  • Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Parameter Symbol Group Min. Typ. Max. Unit Conditions
Absolute Maximum Ratings (Ta = 25 C)
Collector Base Voltage VCBO 60 V
Collector Emitter Voltage VCEO 50 V
Emitter Base Voltage VEBO 7 V
Collector Current IC 150 mA
Power Dissipation Ptot 200 mW
Junction Temperature Tj 150 C
Storage Temperature Range Tstg -55 150 C
Characteristics (Ta = 25 C)
DC Current Gain hFE Q 120 180 270 - VCE = 6 V, IC = 1 mA
DC Current Gain hFE R 270 390 560 - VCE = 6 V, IC = 1 mA
DC Current Gain hFE S - - - - VCE = 6 V, IC = 1 mA
Collector Base Cutoff Current ICBO - - 0.1 A VCB = 60 V
Emitter Base Cutoff Current IEBO - - 0.1 A VEB = 7 V
Collector Base Breakdown Voltage V(BR)CBO 60 - - V IC = 50 A
Collector Emitter Breakdown Voltage V(BR)CEO 50 - - V IC = 1 mA
Emitter Base Breakdown Voltage V(BR)EBO 7 - - V IE = 50 A
Collector Emitter Saturation Voltage VCE(sat) - - 0.4 V IC = 50 mA, IB = 5 mA
Transition Frequency fT - 180 - MHz VCE = 12 V, -IE = 2 mA, f = 100 MHz
Collector Output Capacitance Cob - 2 3.5 pF VCB = 12 V, f = 1 MHz

2410121653_CBI-MMBTSC4081W_C2928251.pdf

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Electronic Design Transistor CBI MMBTSC4081W NPN Silicon Epitaxial Planar with Robust Maximum Ratings

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Product Detail
Emitter-Base Voltage(Vebo) :
7V
Current - Collector Cutoff :
100nA
Pd - Power Dissipation :
200mW
Transition frequency(fT) :
180MHz
type :
NPN
Number :
1 NPN
Contact Supplier
Electronic Design Transistor CBI MMBTSC4081W NPN Silicon Epitaxial Planar with Robust Maximum Ratings

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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