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PNP Plastic Encapsulated Transistor CBI BC857BW Ideal for Switching and AF Amplifier Applications
PNP Plastic Encapsulated Transistor CBI BC857BW Ideal for Switching and AF Amplifier Applications
Specifications
Emitter-Base Voltage(Vebo) :
5V
Current - Collector Cutoff :
15nA
Pd - Power Dissipation :
150mW
Transition frequency(fT) :
100MHz
type :
PNP
Number :
1 PNP
Current - Collector(Ic) :
100mA
Collector - Emitter Voltage VCEO :
45V
Operating Temperature :
-
Description :
Bipolar (BJT) Transistor PNP 45V 100mA 100MHz 150mW Surface Mount SOT-323
Mfr. Part # :
BC857BW
Model Number :
BC857BW
Package :
SOT-323
Description

Product Overview

These PNP plastic-encapsulated transistors are ideally suited for automatic insertion and are designed for switching and AF amplifier applications. They offer reliable performance in various electronic circuits.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Material: Plastic-Encapsulate
  • Type: Transistor (PNP)
  • Package Type: SOT-323

Technical Specifications

Model Parameter Value Unit Test Conditions
BC856W Collector-Base Voltage (VCBO) -80 V IC= -10A, IE=0
Collector-Emitter Voltage (VCEO) -65 V IC= -10mA, IB=0
Device Marking 3A
BC857W Collector-Base Voltage (VCBO) -50 V IC= -10A, IE=0
Collector-Emitter Voltage (VCEO) -45 V IC= -10mA, IB=0
Device Marking 3E (AW), 3F (BW), 3G (CW)
BC858W Collector-Base Voltage (VCBO) -30 V IC= -10A, IE=0
Collector-Emitter Voltage (VCEO) -30 V IC= -10mA, IB=0
Device Marking 3J (AW), 3K (BW), 3L (CW)
Emitter-Base Voltage (VEBO) -5 V IE= -1A, IC=0
Collector Current Continuous (IC) -0.1 A
Collector Power Dissipation (PC*) 150 mW (Ta=25)
Junction Temperature (TJ) 150
Storage Temperature (Tstg) -65-150
BC856AW, 857AW,858AW DC current gain (hFE) 125 VCE= -5V, IC= -2mA
250
420
BC856BW, 857BW,858BW DC current gain (hFE) 220 VCE= -5V, IC= -2mA
475
800
BC857CW,BC858CW DC current gain (hFE) VCE= -5V, IC= -2mA
Collector-emitter saturation voltage (VCE(sat)) -0.65 V IC=-100mA, IB= -5mA
Base-emitter saturation voltage (VBE(sat)) -1.1 V IC= -100mA, IB= -5mA
Transition frequency (fT) 100 MHz VCE= -5V, IC= -10mA, f=100MHz
Collector capacitance (Cob) 4.5 pF VCB=-10V, f=1MHz
Collector cut-off current (ICBO) -15 nA VCB= -30 V , IE=0

Pinout: 1. BASE, 2. EMITTER, 3. COLLECTOR


2410121326_CBI-BC857BW_C2919782.pdf

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PNP Plastic Encapsulated Transistor CBI BC857BW Ideal for Switching and AF Amplifier Applications

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Product Detail
Emitter-Base Voltage(Vebo) :
5V
Current - Collector Cutoff :
15nA
Pd - Power Dissipation :
150mW
Transition frequency(fT) :
100MHz
type :
PNP
Number :
1 PNP
Contact Supplier
PNP Plastic Encapsulated Transistor CBI BC857BW Ideal for Switching and AF Amplifier Applications

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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