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NPN Silicon Epitaxial Planar Transistor EIC MPSA42 Designed for High Voltage Switching and Amplifier
NPN Silicon Epitaxial Planar Transistor EIC MPSA42 Designed for High Voltage Switching and Amplifier
Specifications
Current - Collector Cutoff :
100nA
Emitter-Base Voltage(Vebo) :
6V
Pd - Power Dissipation :
625mW
Transition frequency(fT) :
50MHz
type :
NPN
Current - Collector(Ic) :
500mA
Collector - Emitter Voltage VCEO :
300V
Description :
Bipolar (BJT) Transistor NPN 300V 500mA 50MHz 625mW Through Hole TO-92
Mfr. Part # :
MPSA42
Model Number :
MPSA42
Package :
TO-92
Description

MPSA42 NPN Silicon Epitaxial Planar Transistor

The MPSA42 is an NPN silicon epitaxial planar transistor designed for high voltage switching and amplifier applications. It is recommended to use the complementary PNP transistors MPSA92 and MPSA93.

Product Attributes

  • Certifications: TH97/10561QM, TW00/17276EM

Technical Specifications

ParameterSymbolValueUnitMin.Max.
Absolute Maximum Ratings (Ta = 25 °C)
Collector Base VoltageVCBO300V
Collector Emitter VoltageVCEO300V
Emitter Base VoltageVEBO6V
Collector CurrentIC500mA
Power DissipationPtot625mW
Junction TemperatureTj150°C
Storage Temperature RangeTstg-55 to +150°C
Characteristics at Ta = 25 °C
DC Current Gain at VCE = 10 V, IC = 1 mAhFE25-
DC Current Gain at VCE = 10 V, IC = 10 mAhFE40-
DC Current Gain at VCE = 10 V, IC = 30 mAhFE40-
Collector Base Cutoff Current at VCB = 200 VICBOµA0.1
Collector Base Cutoff Current at VCB = 160 VICBOµA0.1
Emitter Base Cutoff Current at VEB = 6 VIEBOµA0.1
Emitter Base Cutoff Current at VEB = 4 VIEBOµA0.1
Collector Base Breakdown Voltage at IC = 100 µAV(BR)CBO300V
Collector Emitter Breakdown Voltage at IC = 1 mAV(BR)CEO300V
Emitter Base Breakdown Voltage at IE = 100 µAV(BR)EBO6V
Collector Emitter Saturation Voltage at IC = 20 mA, IB = 2 mAVCE(sat)V0.5
Base Emitter Saturation Voltage at IC = 20 mA, IB = 2 mAVBE(sat)V0.9
Gain Bandwidth Product at IC = 10 mA ,VCE = 20 V, f = 100 MHzfT50MHz
Collector Output Capacitance at VCB = 20 V, f = 1 MHzCobpF3

2410121326_EIC-MPSA42_C2978815.pdf

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NPN Silicon Epitaxial Planar Transistor EIC MPSA42 Designed for High Voltage Switching and Amplifier

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Product Detail
Current - Collector Cutoff :
100nA
Emitter-Base Voltage(Vebo) :
6V
Pd - Power Dissipation :
625mW
Transition frequency(fT) :
50MHz
type :
NPN
Current - Collector(Ic) :
500mA
Contact Supplier
NPN Silicon Epitaxial Planar Transistor EIC MPSA42 Designed for High Voltage Switching and Amplifier

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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