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SOT23 PNP Bipolar Junction Transistor FUXINSEMI S9012 High hFE Linearity for Circuit Amplification
SOT23 PNP Bipolar Junction Transistor FUXINSEMI S9012 High hFE Linearity for Circuit Amplification
Specifications
Emitter-Base Voltage(Vebo) :
5V
Current - Collector Cutoff :
100nA
Pd - Power Dissipation :
300mW
Transition frequency(fT) :
150MHz
type :
PNP
Current - Collector(Ic) :
500mA
Collector - Emitter Voltage VCEO :
25V
Operating Temperature :
-55℃~+150℃
Description :
Bipolar (BJT) Transistor PNP 25V 0.5A 150MHz 0.3W Surface Mount SOT-23
Mfr. Part # :
S9012
Model Number :
S9012
Package :
SOT-23
Description

Product Overview

The S9012 is a PNP bipolar junction transistor (BJT) designed for general-purpose applications. It offers high collector current capability and excellent hFE linearity, making it a complementary part to the S9013 NPN transistor. This device is suitable for various electronic circuits requiring amplification or switching.

Product Attributes

  • Brand: Fuxin (implied by www.fuxinsemi.com)
  • Part Number: S9012
  • Package Type: SOT-23
  • Transistor Type: PNP
  • Marking: 2T1

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Collector-Base VoltageVCBO-40V
Collector-Emitter VoltageVCEO-25V
Emitter-Base VoltageVEBO-5V
Collector CurrentIC-500mA
Collector Power DissipationPC300mW
Thermal Resistance (Junction to Ambient)RJA416/W
Operation and Storage Temperature RangeTJ, Tstg-55+150
Collector-Base Breakdown VoltageV(BR)CBOIC=-0.1mA, IE=0-40V
Collector-Emitter Breakdown VoltageV(BR)CEOIC=-1mA, IB=0-25V
Emitter-Base Breakdown VoltageV(BR)EBOIE=-0.1mA, IC=0-5V
Collector Cut-off CurrentICBOVCB=-40V, IE=0-0.1uA
Collector Cut-off CurrentICEOVCE=-20V, IB=0-0.1uA
Emitter Cut-off CurrentIEBOVEB=-5V, IC=0-0.1uA
DC Current GainhFEVCE=-1V, IC=-50mA120400
Collector-Emitter Saturation VoltageVCE(sat)IC=-500mA, IB=-50mA-0.6V
Base-Emitter Saturation VoltageVBE(sat)IC=-500mA, IB=-50mA-1.2V
Transition FrequencyfTVCE=-6V,IC=-20mA, f=30MHz150MHz
Collector Output CapacitanceCobVCB=-10V, IE=0, f=1MHz5pF

2009301206_FUXINSEMI-S9012_C842815.pdf

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SOT23 PNP Bipolar Junction Transistor FUXINSEMI S9012 High hFE Linearity for Circuit Amplification

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Product Detail
Emitter-Base Voltage(Vebo) :
5V
Current - Collector Cutoff :
100nA
Pd - Power Dissipation :
300mW
Transition frequency(fT) :
150MHz
type :
PNP
Current - Collector(Ic) :
500mA
Contact Supplier
SOT23 PNP Bipolar Junction Transistor FUXINSEMI S9012 High hFE Linearity for Circuit Amplification

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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