This product is a high collector current transistor, complementary to the S8050, designed for general-purpose applications. It features a SOT-23 package for surface mounting.
| Parameter | Symbol | Test Conditions | Min | Max | Unit |
| Collector-Base Voltage | VCBO | -40 | V | ||
| Collector-Emitter Voltage | VCEO | -25 | V | ||
| Emitter-Base Voltage | VEBO | -5 | V | ||
| Collector Current | IC | -0.5 | A | ||
| Collector Power Dissipation | PC | Ta=25 | 300 | mW | |
| Thermal Resistance (Junction to Ambient) | RJA | 417 | /W | ||
| Junction Temperature | Tj | 150 | |||
| Storage Temperature | Tstg | -55 | +150 | ||
| Collector-base breakdown voltage | V(BR)CBO | IC = -100A, IE=0 | -40 | V | |
| Collector-emitter breakdown voltage | V(BR)CEO | IC =-1mA, IB=0 | -25 | V | |
| Emitter-base breakdown voltage | V(BR)EBO | IE= -100A, IC=0 | -5 | V | |
| Collector cut-off current | ICBO | VCB= -40V, IE=0 | -0.1 | A | |
| Collector cut-off current | ICEO | VCE= -20V, IB=0 | -0.1 | A | |
| Emitter cut-off current | IEBO | VEB= -3V, IC=0 | -0.1 | A | |
| DC current gain | hFE(1) | VCE= -1V, IC= -50mA | 120 | 400 | |
| DC current gain | hFE(2) | VCE= -1V, IC= -500mA | 50 | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=-500mA, IB= -50mA | -0.6 | V | |
| Base-emitter saturation voltage | VBE(sat) | IC=-500mA, IB= -50mA | -1.2 | V | |
| Transition frequency | fT | VCE= -6V, IC= -20mA, f=30MHz | 150 | MHz |