The MPSA75 series devices are silicon PNP Darlington transistors manufactured using the epitaxial planar process. These transistors are specifically designed for applications that demand extremely high gain. They are available in the TO-92 case.
| Model | Collector-Base Voltage (VCBO) | Collector-Emitter Voltage (VCES) | Emitter-Base Voltage (VEBO) | Continuous Collector Current (IC) | Power Dissipation (PD) | Operating & Storage Junction Temp (TJ, Tstg) | Thermal Resistance (JA) | Cutoff Current (ICBO) @ VCB | Saturation Current (ICES) @ VCE | Reverse Current (IEBO) @ VEB | Breakdown Voltage (BVCBO) @ IC | Breakdown Voltage (BVCES) @ IC | Saturation Voltage (VCE(SAT)) @ IC, IB | On-Voltage (VBE(ON)) @ VCE, IB | DC Current Gain (hFE) @ VCE, IC | Transition Frequency (fT) @ VCE, IC |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MPSA75 | 40 V | 40 V | 10 V | 500 mA | 625 mW | -65 to +150 C | 200 C/W | 100 nA @ 30V | 500 nA @ 30V | 100 nA @ 10V | 40 V @ 100A | 40 V @ 100A | 1.5 V @ 100mA, 0.1mA | 2.0 V @ 5.0V, 100mA | 10K @ 5.0V, 10mA 10K @ 5.0V, 100mA | 125 MHz @ 5.0V, 10mA |
| MPSA76 | 50 V | 50 V | 10 V | 500 mA | 625 mW | -65 to +150 C | 200 C/W | 100 nA @ 40V | 500 nA @ 40V | 100 nA @ 10V | 50 V @ 100A | 50 V @ 100A | 1.5 V @ 100mA, 0.1mA | 2.0 V @ 5.0V, 100mA | 10K @ 5.0V, 10mA 10K @ 5.0V, 100mA | 125 MHz @ 5.0V, 10mA |
| MPSA77 | 60 V | 60 V | 10 V | 500 mA | 625 mW | -65 to +150 C | 200 C/W | 100 nA @ 50V | 500 nA @ 50V | 100 nA @ 10V | 60 V @ 100A | 60 V @ 100A | 1.5 V @ 100mA, 0.1mA | 2.0 V @ 5.0V, 100mA | 10K @ 5.0V, 10mA 10K @ 5.0V, 100mA | 125 MHz @ 5.0V, 10mA |
Lead Code: 1) Emitter, 2) Base, 3) Collector
Marking: Full Part Number