MachineU > China Products
NPN Silicon Epitaxial Planar Transistor EIC MMBT6517BEC for Switching and AF Amplifier Applications
NPN Silicon Epitaxial Planar Transistor EIC MMBT6517BEC for Switching and AF Amplifier Applications
Specifications
Emitter-Base Voltage(Vebo) :
6V
Current - Collector Cutoff :
50nA
Pd - Power Dissipation :
200mW
Transition frequency(fT) :
200MHz
type :
NPN
Current - Collector(Ic) :
500mA
Collector - Emitter Voltage VCEO :
350V
Description :
Bipolar (BJT) Transistor NPN 350V 500mA 200MHz 200mW Surface Mount TO-236
Mfr. Part # :
MMBT6517BEC
Model Number :
MMBT6517BEC
Package :
TO-236
Description

Product Overview

MMBT6517 is an NPN Silicon Epitaxial Planar Transistor designed for switching and AF amplifier applications. On special request, these transistors can be manufactured in different pin configurations.

Product Attributes

  • Brand: SGS (implied from datasheet markings)
  • Certifications: IATF 0060636

Technical Specifications

ParameterSymbolValueUnitConditions
Collector Base VoltageVCBO350V
Collector Emitter VoltageVCEO350V
Emitter Base VoltageVEBO6V
Collector CurrentIC500mA
Power DissipationPtot200mWTa = 25 OC
Junction TemperatureTj150OC
Storage Temperature RangeTstg-55 to +150OC
DC Current GainhFE20-VCE = 10 V, IC = 1 mA
DC Current GainhFE30-VCE = 10 V, IC = 10 mA
DC Current GainhFE30-VCE = 10 V, IC = 30 mA
DC Current GainhFE20-VCE = 10 V, IC = 50 mA
DC Current GainhFE15-VCE = 10 V, IC = 100 mA
Collector Base Cutoff CurrentICBO-50nAVCB = 250 V
Emitter Base Cutoff CurrentIEBO-50nAVEB = 5 V
Collector Base Breakdown VoltageV(BR)CBO350VIC = 100 A
Collector Emitter Breakdown VoltageV(BR)CEO350VIC = 1 mA
Emitter Base Breakdown VoltageV(BR)EBO6VIE = 10 A
Collector Emitter Saturation VoltageVCE(sat)0.3VIC = 10 mA, IB = 1 mA
Collector Emitter Saturation VoltageVCE(sat)0.35VIC = 20 mA, IB = 2 mA
Collector Emitter Saturation VoltageVCE(sat)0.5VIC = 30 mA, IB = 3 mA
Collector Emitter Saturation VoltageVCE(sat)1VIC = 50 mA, IB = 5 mA
Base Emitter Saturation VoltageVBE(sat)0.75VIC = 10 mA, IB = 1 mA
Base Emitter Saturation VoltageVBE(sat)0.85VIC = 20 mA, IB = 2 mA
Base Emitter Saturation VoltageVBE(sat)0.9VIC = 30 mA, IB = 3 mA
Base Emitter On VoltageVBE(on)2VVCE = 10 V, IC = 100 mA
Gain Bandwidth ProductfT40 to 200MHzVCE = 20 V, IC = 10 mA, f = 20 MHz
Collector Output CapacitanceCob6pFVCB = 20 V, f = 1 MHz

2505151658_EIC-MMBT6517BEC_C3015264.pdf

Send your message to this supplier
Send Now

NPN Silicon Epitaxial Planar Transistor EIC MMBT6517BEC for Switching and AF Amplifier Applications

Ask Latest Price
Product Detail
Emitter-Base Voltage(Vebo) :
6V
Current - Collector Cutoff :
50nA
Pd - Power Dissipation :
200mW
Transition frequency(fT) :
200MHz
type :
NPN
Current - Collector(Ic) :
500mA
Contact Supplier
NPN Silicon Epitaxial Planar Transistor EIC MMBT6517BEC for Switching and AF Amplifier Applications

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
Discover similar products
View More

Find Similar Products By Category:

Supplier Homepage Products Single Bipolar Transistors
MachineU China Products
Contact Supplier
Submit Requirement