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SOT23 Package Silicon Variable Capacitance Diode Infineon BB804SF1E6327 with Common Cathode Configuration
SOT23 Package Silicon Variable Capacitance Diode Infineon BB804SF1E6327 with Common Cathode Configuration
Specifications
Capacitance Ratio :
1.71@C2V/C8V
DC Reverse Voltage(Vr) :
18V
Diode Configuration :
1 Pair Common Cathode
Diode Capacitance :
47.5pF@2V,1MHz
Description :
1.71@C2V/C8V 18V 1 Pair Common Cathode 47.5pF@2V,1MHz SOT-23 Variable Capacitance (Varicaps, Varactors) RoHS
Mfr. Part # :
BB804SF1E6327
Model Number :
BB804SF1E6327
Package :
SOT-23
Description

Product Overview

The BB804 is a Silicon Variable Capacitance Diode designed for FM tuners. It features a monolithic chip with a common cathode for perfect tracking of both diodes, offering uniform "square law" characteristics. This diode is ideal for HiFi tuning devices when used in a low-distortion, back-to-back configuration. The BB804 is Pb-free and RoHS compliant.

Product Attributes

  • Brand: Infineon Technologies
  • Type: Silicon Variable Capacitance Diode
  • Package: SOT23
  • Configuration: Common cathode
  • Compliance: Pb-free (ROHS compliant)

Technical Specifications

Parameter Symbol Value Unit Notes
Inductance (LS) LS(nH) 1.8 nH
Marking BB804 SF1/2/3* (*For differences see next page)
Diode reverse voltage VR 18 V Maximum Rating at TA = 25C
Peak reverse voltage VRM 20 V Maximum Rating at TA = 25C
Forward current IF 50 mA Maximum Rating at TA = 25C
Operating temperature range Top -55 ... 125 C Maximum Rating
Storage temperature Tstg -55 ... 150 C Maximum Rating
Reverse current (VR = 16 V) IR - nA max. at TA = 25C
Reverse current (VR = 16 V, TA = 65 C) IR - nA max. at TA = 65C
Diode capacitance (VR = 2 V, f = 1 MHz) CT 42 - 47.5 pF Electrical Characteristic
Capacitance ratio (VR = 2 V, VR = 8 V, f = 1 MHz) CT2/CT8 1.65 - 1.71 Electrical Characteristic
Series resistance (VR = 2 V, f = 100 MHz) rS - 0.18 Electrical Characteristic
Figure of merit (f = 100 MHz, VR = 2 V) Q - 200 - Electrical Characteristic
Temperature coefficient of diode capacitance (VR = 2 V, f = 1 MHz) TCC - 330 ppm/K Electrical Characteristic
Capacitance Group CT at 2V (min) CT at 2V (max)
1 43pF 44.5pF
2 44pF 45.5pF
3 45pF 46.5pF

Capacitance Groups: Marked by subgroup number on component and package label. Packing units contain diodes of one subgroup only.

Standard Packing:

  • Reel 180 mm = 3.000 Pieces/Reel
  • Reel 330 mm = 10.000 Pieces/Reel

2411220152_Infineon-BB804SF1E6327_C17649494.pdf

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SOT23 Package Silicon Variable Capacitance Diode Infineon BB804SF1E6327 with Common Cathode Configuration

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Product Detail
Capacitance Ratio :
1.71@C2V/C8V
DC Reverse Voltage(Vr) :
18V
Diode Configuration :
1 Pair Common Cathode
Diode Capacitance :
47.5pF@2V,1MHz
Description :
1.71@C2V/C8V 18V 1 Pair Common Cathode 47.5pF@2V,1MHz SOT-23 Variable Capacitance (Varicaps, Varactors) RoHS
Mfr. Part # :
BB804SF1E6327
Contact Supplier
SOT23 Package Silicon Variable Capacitance Diode Infineon BB804SF1E6327 with Common Cathode Configuration

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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