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Common Cathode Silicon Variable Capacitance Diode Infineon BB814E7801GR1HTSA1 with High Tuning Ratio
Common Cathode Silicon Variable Capacitance Diode Infineon BB814E7801GR1HTSA1 with High Tuning Ratio
Specifications
Capacitance Ratio :
2.25@C2V/C8V
DC Reverse Voltage(Vr) :
18V
Diode Configuration :
1 Pair Common Cathode
Diode Capacitance :
22.7pF@8V,1MHz
Description :
2.25@C2V/C8V 18V 1 Pair Common Cathode 22.7pF@8V,1MHz SOT-23-3 Variable Capacitance (Varicaps, Varactors) RoHS
Mfr. Part # :
BB814E7801GR1HTSA1
Model Number :
BB814E7801GR1HTSA1
Package :
SOT-23-3
Description

Product Overview

The BB814 is a Silicon Variable Capacitance Diode designed for FM radio tuners with an extended frequency band. It offers a high tuning ratio at low supply voltage, making it ideal for car radio applications. This diode features a monolithic chip with a common cathode configuration for perfect dual diode tracking. Coded capacitance groups and group matching are available. The product is Pb-free and RoHS compliant.

Product Attributes

  • Brand: Infineon Technologies
  • Type: Silicon Variable Capacitance Diode
  • Package: SOT23
  • Configuration: Common cathode
  • Certifications: Pb-free (RoHS compliant)

Technical Specifications

Parameter Symbol Value Unit Notes
Diode reverse voltage VR 18 V Maximum Ratings at TA = 25C
Peak reverse voltage VRM 20 V Maximum Ratings at TA = 25C
Forward current IF 50 mA Maximum Ratings at TA = 25C
Operating temperature range Top -55 ... 125 C Maximum Ratings
Storage temperature Tstg -55 ... 150 C Maximum Ratings
Reverse current (VR = 16 V) IR - nA TA = 25C
Reverse current (VR = 16 V, TA = 60 C) IR - 200 nA TA = 60C
Diode capacitance (VR = 2 V, f = 1 MHz) CT 43 ... 46.5 pF Capacitance groups 1 & 2
Diode capacitance (VR = 8 V, f = 1 MHz) CT 19.1 ... 22.7 pF Capacitance groups 1 & 2
Capacitance ratio (VR = 2 V, VR = 8 V, f = 1 MHz) CT2/CT8 2.05 ... 2.25 - -
Capacitance matching (VR = 2 V, VR = 8 V, f = 1 MHz) CT/CT - 3 % Maximum
Series resistance (VR = 2 V, f = 100 MHz) rS - 0.18 Typical
Q factor (f = 100 MHz, VR = 2 V) Q - 200 Typical
LS (nH) - 1.8 - SOT23
Marking - SH1/2* - *For differences see next page

2411220055_Infineon-BB814E7801GR1HTSA1_C3271984.pdf

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Common Cathode Silicon Variable Capacitance Diode Infineon BB814E7801GR1HTSA1 with High Tuning Ratio

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Product Detail
Capacitance Ratio :
2.25@C2V/C8V
DC Reverse Voltage(Vr) :
18V
Diode Configuration :
1 Pair Common Cathode
Diode Capacitance :
22.7pF@8V,1MHz
Description :
2.25@C2V/C8V 18V 1 Pair Common Cathode 22.7pF@8V,1MHz SOT-23-3 Variable Capacitance (Varicaps, Varactors) RoHS
Mfr. Part # :
BB814E7801GR1HTSA1
Contact Supplier
Common Cathode Silicon Variable Capacitance Diode Infineon BB814E7801GR1HTSA1 with High Tuning Ratio

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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