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High Q silicon tuning diode Infineon BBY5702VH6327XTSA1 for VCXOs and mobile communication equipment
High Q silicon tuning diode Infineon BBY5702VH6327XTSA1 for VCXOs and mobile communication equipment
Specifications
Capacitance Ratio :
4.5@C1V/C4V
Diode Configuration :
Independent
DC Reverse Voltage(Vr) :
10V
Diode Capacitance :
5.5pF@4V,1MHz
Description :
4.5@C1V/C4V Independent 10V 5.5pF@4V,1MHz SC-79-2 Variable Capacitance (Varicaps, Varactors) RoHS
Mfr. Part # :
BBY5702VH6327XTSA1
Model Number :
BBY5702VH6327XTSA1
Package :
SC-79-2
Description

Product Overview

The BBY57 series is a high-performance silicon tuning diode designed for low tuning voltage operation in VCOs for mobile communication equipment and control elements like TCXOs and VCXOs. These diodes offer excellent linearity, high Q, low series resistance, and a high capacitance ratio. They are Pb-free and qualified according to AEC Q101 standards.

Product Attributes

  • Brand: Infineon Technologies
  • Material: Silicon
  • Compliance: Pb-free (RoHS compliant)
  • Qualification: AEC Q101

Technical Specifications

Model Type Package Configuration LS (nH) Marking
BBY57-02L Silicon Tuning Diode TSLP-2 single 0.4 55
BBY57-02V Silicon Tuning Diode SC79 single 0.6 5
BBY57-02W Silicon Tuning Diode SCD80 single 0.6 55
BBY57-05W Silicon Tuning Diode SOT323 common cathode 1.4 D5s
Parameter Symbol Value Unit Notes
Diode reverse voltage VR 10 V Maximum Rating at TA = 25C
Forward current IF 20 mA Maximum Rating at TA = 25C
Operating temperature range Top -55 ... 125 C Maximum Rating
Storage temperature Tstg -55 ... 150 C Maximum Rating
Reverse current (VR = 8 V) IR - 10 nA TA = 25C
Reverse current (VR = 8 V, TA = 85 C) IR - 100 nA
Diode capacitance (VR = 1 V, f = 1 MHz) CT 16.5 - 18.6 pF
Diode capacitance (VR = 2.5 V, f = 1 MHz) CT 9.35 - pF
Diode capacitance (VR = 3 V, f = 1 MHz) CT 7 - 5.5 pF
Diode capacitance (VR = 4 V, f = 1 MHz) CT 4.7 - pF
Capacitance ratio (VR = 1 V, VR = 3 V, f = 1 MHz) CT1/CT3 2.45 - typ.
Capacitance ratio (VR = 1 V, VR = 4 V, f = 1 MHz) CT1/CT4 3 - 4.5 -
Series resistance (VR = 1 V, f = 470 MHz, BBY57-02L) rS 0.35 typ.
Series resistance (VR = 1 V, f = 470 MHz, all others) rS 0.3 typ.

2411111119_Infineon-BBY5702VH6327XTSA1_C3272464.pdf

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High Q silicon tuning diode Infineon BBY5702VH6327XTSA1 for VCXOs and mobile communication equipment

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Product Detail
Capacitance Ratio :
4.5@C1V/C4V
Diode Configuration :
Independent
DC Reverse Voltage(Vr) :
10V
Diode Capacitance :
5.5pF@4V,1MHz
Description :
4.5@C1V/C4V Independent 10V 5.5pF@4V,1MHz SC-79-2 Variable Capacitance (Varicaps, Varactors) RoHS
Mfr. Part # :
BBY5702VH6327XTSA1
Contact Supplier
High Q silicon tuning diode Infineon BBY5702VH6327XTSA1 for VCXOs and mobile communication equipment

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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