Product Overview
The BBY55 series are Silicon Tuning Diodes designed for low tuning voltage operation in VCOs for mobile communications equipment. These hyperabrupt tuning diodes offer excellent linearity, high Q, and low series resistance. They are available in packages with very low capacitance spread and are Pb-free (RoHS compliant).
Product Attributes
- Brand: Infineon Technologies
- Compliance: Pb-free (RoHS compliant)
Technical Specifications
| Model | Type | Package | Configuration | LS (nH) | Marking |
| BBY55-02V | Tuning Diode | SC79 | single | 0.6 | 77 white |
| BBY55-02W | Tuning Diode | SCD80 | single | 0.6 | 7 |
| BBY55-03W | Tuning Diode | SOD323 | single | 1.8 | 7 |
| Parameter | Symbol | Value | Unit | Condition |
| Diode reverse voltage | VR | 16 | V | TA = 25C |
| Forward current | IF | 20 | mA | TA = 25C |
| Operating temperature range | Top | -55 ... 150 | C | |
| Storage temperature | Tstg | -55 ... 150 | C | |
| Reverse current | IR | - | nA | VR = 15 V, TA = 25C |
| Reverse current | IR | - | 100 | nA | VR = 15 V, TA = 85C |
| Diode capacitance | CT | 17.5 - 19.6 | pF | VR = 1 V, f = 1 MHz |
| Diode capacitance | CT | 14 - 16 | pF | VR = 2 V, f = 1 MHz |
| Diode capacitance | CT | 11.6 - 13.6 | pF | VR = 3 V, f = 1 MHz |
| Diode capacitance | CT | 10 - 12 | pF | VR = 4 V, f = 1 MHz |
| Diode capacitance | CT | 5.5 - 6.5 | pF | VR = 10 V, f = 1 MHz |
| Capacitance ratio | CT2/CT10 | 2 - 3 | | VR = 2 V, VR = 10 V, f = 1 MHz |
| Series resistance | rS | - 0.4 | | VR = 5 V, f = 470 MHz |
| Series resistance | rS | - 0.15 | | VR = 5 V, f = 470 MHz |
2411220122_Infineon-BBY-55-03W-E6327_C533701.pdf