Product Overview
The BBY55 series are silicon hyperabrupt tuning diodes designed for low tuning voltage operation in VCOs for mobile communications equipment. These diodes offer excellent linearity, high Q, and low series resistance, along with a very low capacitance spread. They are Pb-free and RoHS compliant.
Product Attributes
- Brand: Infineon Technologies
- Material: Silicon
- Compliance: Pb-free (RoHS compliant)
Technical Specifications
| Model | Type | Package | LS (nH) | Marking |
| BBY55-02V | single | SC79 | 0.6 | 77 white |
| BBY55-02W | single | SCD80 | 0.6 | 7 |
| BBY55-03W | single | SOD323 | 1.8 | 7 |
| Parameter | Symbol | Value | Unit | Condition |
| Diode reverse voltage | VR | 16 | V | TA = 25C |
| Forward current | IF | 20 | mA | TA = 25C |
| Operating temperature range | Top | -55 ... 150 | C | |
| Storage temperature | Tstg | -55 ... 150 | C | |
| Reverse current | IR | - | nA | VR = 15 V, TA = 25C |
| Reverse current | IR | - | 100 | nA | VR = 15 V, TA = 85C |
| Diode capacitance | CT | 17.5 - 19.6 | pF | VR = 1 V, f = 1 MHz |
| Diode capacitance | CT | 14 - 16 | pF | VR = 2 V, f = 1 MHz |
| Diode capacitance | CT | 11.6 - 13.6 | pF | VR = 3 V, f = 1 MHz |
| Diode capacitance | CT | 10 - 12 | pF | VR = 4 V, f = 1 MHz |
| Diode capacitance | CT | 5.5 - 6.5 | pF | VR = 10 V, f = 1 MHz |
| Capacitance ratio | CT2/CT10 | 2 - 3 | | VR = 2 V, VR = 10 V, f = 1 MHz |
| Series resistance | rS | - 0.4 | | VR = 5 V, f = 470 MHz |
| Series resistance | rS | - 0.15 | | VR = 5 V, f = 470 MHz |
2411220122_Infineon-BBY55-02WH6327_C3272470.pdf