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Dual transistor NPN plus PNP epitaxial planar die GOODWORK MMDT2227 for power amplification and switching
Dual transistor NPN plus PNP epitaxial planar die GOODWORK MMDT2227 for power amplification and switching
Specifications
Current - Collector Cutoff :
10nA
Emitter-Base Voltage(Vebo) :
6V
Pd - Power Dissipation :
200mW
Transition frequency(fT) :
300MHz
type :
PNP
Number :
1 NPN + 1 PNP
Current - Collector(Ic) :
600mA
Collector - Emitter Voltage VCEO :
40V
Operating Temperature :
-55℃~+150℃@(Tj)
Description :
200mW PNP 600mA 40V SOT-363 Single Bipolar Transistors RoHS
Mfr. Part # :
MMDT2227
Model Number :
MMDT2227
Package :
SOT-363
Description

Product Overview

The MMDT2227 is a DUAL TRANSISTOR (NPN+PNP) featuring epitaxial planar die construction. It integrates one 2222A NPN transistor and one 2907A PNP transistor, making it ideal for power amplification and switching applications.

Product Attributes

  • Marking: K27

Technical Specifications

ModelParameterSymbolTest ConditionsMinMaxUnit
NPN 2222ACollector-Base VoltageVCBO75V
Collector-Emitter VoltageVCEO40V
Emitter-Base VoltageVEBO6V
Collector Current -ContinuousIC600mA
Collector Power DissipationPCTa=25200mW
Junction TemperatureTJ150
Storage TemperatureTstg-55150
Collector-base breakdown voltageV(BR)CBOIC= 10A, IE=075V
Collector-emitter breakdown voltageV(BR)CEOIC= 10mA, IB=040V
Emitter-base breakdown voltageV(BR)EBOIE=10A.IC=06V
Collector cut-off currentICBOVCB= 60V, IE=010nA
Collector cut-off currentICEXVCE= 60V,VEB(off)=3V10nA
Emitter cut-off currentIEBOVEB= 3 V, IC=010nA
DC current gainhFEVCE=10V, IC= 0.1mA35
DC current gainhFEVCE=10V, IC= 1mA50
DC current gainhFEVCE=10V, IC= 10mA75
DC current gainhFEVCE=10V, IC= 150mA100300
PNP 2907ACollector-Base VoltageVCBO-60V
Collector-Emitter VoltageVCEO-60V
Emitter-Base VoltageVEBO-5V
Collector Current -ContinuousIC-600mA
Collector Power DissipationPCTa=25200mW
Junction TemperatureTJ150
Storage TemperatureTstg-55150
Collector-base breakdown voltageV(BR)CBOIC= -10A, IE=0-60V
Collector-emitter breakdown voltageV(BR)CEOIC= -10mA, IB=0-60V
Emitter-base breakdown voltageV(BR)EBOIE=-10A, IC=0-5V
Collector cut-off currentICBOVCB=-50V, IE=0-10nA

2508261540_GOODWORK-MMDT2227_C50581513.pdf

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Dual transistor NPN plus PNP epitaxial planar die GOODWORK MMDT2227 for power amplification and switching

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Product Detail
Current - Collector Cutoff :
10nA
Emitter-Base Voltage(Vebo) :
6V
Pd - Power Dissipation :
200mW
Transition frequency(fT) :
300MHz
type :
PNP
Number :
1 NPN + 1 PNP
Contact Supplier
Dual transistor NPN plus PNP epitaxial planar die GOODWORK MMDT2227 for power amplification and switching

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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