The PMBT3906 is a PNP epitaxial planar die construction transistor designed as a complementary type to the NPN transistor MMBT3904. It is suitable for various electronic applications requiring reliable transistor performance.
| Parameter | Symbol | Test conditions | Min | Max | Unit |
| CollectorBase Voltage | VCBO | -40 | V | ||
| CollectorEmitter Voltage | VCEO | -40 | V | ||
| EmitterBase Voltage | VEBO | -5 | V | ||
| Collector Current Continuous | IC | -0.2 | A | ||
| Collector Dissipation | PC | 0.2 | W | ||
| Thermal Resistance From Junction To Ambient | RthJA | 625 | /W | ||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55~+150 | |||
| Collector-base breakdown voltage | V(BR)CBO | IC =-10uA, IE = 0 | -40 | V | |
| Collector-emitter breakdown voltage | V(BR)CEO | IC =-1 mA, IB = 0 | -40 | V | |
| Emitter-base breakdown voltage | V(BR)EBO | IE =-10uA, IC = 0 | -5 | V | |
| Collector cut-off current | ICBO | VCB =-40V, IE = 0 | -50 | nA | |
| Collector cut-off current | ICEX | VCE =-30V, VCE=-3V | -100 | nA | |
| DC current gain | hFE1 | VEB =-5V, IC = 0 | -100 | ||
| DC current gain | hFE2 | VCE =-3V, IC =-10mA, IB1= 1mA | -100 | ||
| DC current gain | hFE3 | VCC =-3V, IC =-10mA,IB1= 1mA | 300 | ||
| Collector-emitter saturation voltage | VCE(sat) | IC =-50mA, IB =-5mA | -0.3 | V | |
| Base-emitter saturation voltage | VBE(sat) | IC =-50mA, IB =-5mA | -0.95 | V | |
| Delay time | td | VCE =-2V, IC =-100mA | 30 | ns | |
| Rise time | tr | VCE =-1V, IC =-50mA | 35 | ns | |
| Storage time | ts | VCE =-1V, IC =-10mA | 225 | ns | |
| Fall time | tf | 75 | ns | ||
| Transition frequency | fT | IC =-10mA, f=100MHz | 300 | MHz | |
| Emitter cut-off current | IEBO | VBE =-0.5V | -100 | nA |