The 2SA1943/2SC5200 are semiconductor discrete devices designed for low-frequency amplification. They offer high breakdown voltage, low leakage current, and superior frequency characteristics, making them suitable for general amplification circuits, audio power amplifiers, power supply regulation, and other electronic circuits.
| Parameter | Value | Conditions |
|---|---|---|
| Main Parameters | ||
| Low Frequency Amplifier Transistor | ||
| Vceo | 230V | |
| Ic | 16A | |
| Pc | 180W | |
| Absolute Maximum Ratings (Tc=25) | ||
| VCBO | 230 V | |
| VCEO | 230 V | |
| VEBO | 6 V | |
| IC | 16 A | |
| IB | 1 A | |
| PC | 180 W | |
| Tj | 150 | |
| Tstg | -55~+150 | |
| Electrical Characteristics | ||
| VCBO | 230 V | IC=1mA, IB=0 |
| VCEO | 230 V | IC=10mA, IB=0 |
| VEBO | 6 V | IC=1mA, IC=0 |
| ICBO | 0.1 mA | VCB=230V, IE=0 |
| ICEO | 0.1 mA | VCE=230V, IB=0 |
| IEBO | 0.1 mA | VEB=6V, IC=0 |
| Hfe*1 | 55 - 160 | VCE=5V, IC=1A |
| Hfe*2 | 35 | VCE=5V, IC=5A |
| VCEsat*1 | 1.5 V | IC=5A, IB=0.5A |
| VCEsat*2 | 2.5 V | IC=8A, IB=0.8A |
| VBEON | 1.5 V | VCE=5V, IC=1A |
| fT | 15 MHZ | VCE=5V, IC=1A |