MachineU > China Products
Silicon PNP Darlington Power Transistor JSMSEMI MJD127T4G-JSM for Amplifier and Switching Applications
Silicon PNP Darlington Power Transistor JSMSEMI MJD127T4G-JSM for Amplifier and Switching Applications
Specifications
Current - Collector Cutoff :
10uA
Pd - Power Dissipation :
1.75W
DC Current Gain :
1000
Transition frequency(fT) :
4MHz
type :
PNP
Current - Collector(Ic) :
8A
Collector - Emitter Voltage VCEO :
100V
Description :
1.75W 1000 PNP 8A 100V TO-252 Single Bipolar Transistors RoHS
Mfr. Part # :
MJD127T4G-JSM
Model Number :
MJD127T4G-JSM
Package :
TO-252
Description

Product Overview

The MJD127T4G is a Silicon PNP Darlington Power Transistor designed for general purpose amplifier and low speed switching applications. It features a low collector-emitter saturation voltage, high DC current gain, and is 100% avalanche tested, ensuring robust device performance and reliable operation. The lead is formed for surface mount applications.

Product Attributes

  • Brand: JSMICRO Semiconductor
  • Material: Silicon

Technical Specifications

ParameterSymbolConditionsValueUnit
Collector-Base VoltageVCBO-100V
Collector-Emitter VoltageVCEO-100V
Emitter-Base VoltageVEBO-5V
Collector Current-ContinuousIC-8A
Total Power Dissipation @ Ta=25PCTa=251.75W
Collector Power DissipationPCTC=2520W
Junction TemperatureTJ150
Storage Temperature RangeTstg-55~150
Collector-Emitter Breakdown VoltageV(BR)CEOIC= -30mA; IB= 0-100V
Collector-Emitter Saturation VoltageVCE(sat)-1IC=-4A; IB= -16mA-2.0V
Collector-Emitter Saturation VoltageVCE(sat)-2IC=-8A; IB= -80mA-4.0V
Base-Emitter Saturation VoltageVBE(sat)IC=-8A; IB= -80mA-4.5V
Base-Emitter VoltageVBE(ON)IC= -4A; VCE= -4V-2.8V
Collector Cutoff CurrentICEOVCE=-50V; IE= 0-10uA
Emitter Cutoff CurrentIEBOVEB=-5V; IC= 0-2mA
DC Current GainhFE1IC= -4A; VCE=- 4V1000-12000
DC Current GainhFE2IC=-8A; VCE= -4V100
Current-GainBandwidth ProductfTIC=-3A; VCE=- 4V4MHz
Output CapacitanceCOBIE=0; VCB= -10V; f= 1.0MH300pF

2409302232_JSMSEMI-MJD127T4G-JSM_C20606863.pdf

Send your message to this supplier
Send Now

Silicon PNP Darlington Power Transistor JSMSEMI MJD127T4G-JSM for Amplifier and Switching Applications

Ask Latest Price
Product Detail
Current - Collector Cutoff :
10uA
Pd - Power Dissipation :
1.75W
DC Current Gain :
1000
Transition frequency(fT) :
4MHz
type :
PNP
Current - Collector(Ic) :
8A
Contact Supplier
Silicon PNP Darlington Power Transistor JSMSEMI MJD127T4G-JSM for Amplifier and Switching Applications

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
Discover similar products
View More

Find Similar Products By Category:

Supplier Homepage Products Single Bipolar Transistors
MachineU China Products
Contact Supplier
Submit Requirement