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NPN Transistor GOODWORK SS8050-Y1 Featuring 40V Collector Base Voltage and Wide Storage Temperature Range
NPN Transistor GOODWORK SS8050-Y1 Featuring 40V Collector Base Voltage and Wide Storage Temperature Range
Specifications
Current - Collector Cutoff :
100nA
Emitter-Base Voltage(Vebo) :
5V
Pd - Power Dissipation :
-
Transition frequency(fT) :
100MHz
type :
NPN
Current - Collector(Ic) :
1.5A
Collector - Emitter Voltage VCEO :
25V
Operating Temperature :
-55℃~+150℃@(Tj)
Description :
NPN 1.5A 25V SOT-23 Single Bipolar Transistors RoHS
Mfr. Part # :
SS8050-Y1
Model Number :
SS8050-Y1
Package :
SOT-23
Description

S 8050 NPN Transistor

The S 8050 is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It is a complementary device to the SS8550.

Product Attributes

  • Marking Type number: SS8050
  • Marking code: Y1

Technical Specifications

Parameter Symbol Test conditions Min Typ Max Unit
CollectorBase Voltage VCBO 40 V
CollectorEmitter Voltage VCEO 25 V
EmitterBase Voltage VEBO 5 V
Collector Current Continuous IC 1.5 A
Collector Power Dissipation PC (Ta=25 unless otherwise noted) 300 mW
Thermal Resistance From Junction To Ambient RthJA 417 /W
Operation Junction and Storage Temperature Range TJ,Tstg -55 +150
Collector-base breakdown voltage V(BR)CBO IC = 100uA, IE = 0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC = 0.1 mA, IB = 0 25 V
Emitter-base breakdown voltage V(BR)EBO IE = 100uA, IC = 0 5 V
Collector cut-off current ICBO VCB = 40V, IE = 0 100 nA
Emitter cut-off current IEBO VEB = 5V, IC =0 0.1 uA
DC current gain hFE1 VCE = 1V, IC = 100mA 120
DC current gain hFE2 IC = 800mA, IB = 80mA 400
Collector-emitter saturation voltage VCE(sat) IC = 800mA, IB = 80mA 0.5 1.2 V
Base-emitter saturation voltage VBE(sat) VCE = 1V, IC = 800mA 1.2 V
Transition frequency fT VCE = 10V, IC = 50mA, f=30MHz 100 MHz
Collector cut-off current ICEO VCE = 20V, IE=0 0.1 uA

hFE1 Classification

Rank Range
L 120-200
H 300-400
J 200-350

2507081835_GOODWORK-SS8050-Y1_C49318976.pdf

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NPN Transistor GOODWORK SS8050-Y1 Featuring 40V Collector Base Voltage and Wide Storage Temperature Range

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Product Detail
Current - Collector Cutoff :
100nA
Emitter-Base Voltage(Vebo) :
5V
Pd - Power Dissipation :
-
Transition frequency(fT) :
100MHz
type :
NPN
Current - Collector(Ic) :
1.5A
Contact Supplier
NPN Transistor GOODWORK SS8050-Y1 Featuring 40V Collector Base Voltage and Wide Storage Temperature Range

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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