The FMMT619 is an NPN bipolar transistor featuring low equivalent on-resistance. It is suitable for various applications requiring efficient power handling.
| Characteristic | Symbol | Rating | Unit | Min | Type | Max |
| Absolute Maximum Ratings | ||||||
| Collector-Base Voltage | VCBO | 50 | V | |||
| Collector-Emitter Voltage | VCEO | 50 | V | |||
| Emitter-Base Voltage | VEBO | 5 | V | |||
| Collector Current | IC | 2000 | mA | |||
| Power Dissipation (Ta=25) | PC | 250 | mW | |||
| Thermal Resistance Junction-Ambient | RJA | 500 | /W | |||
| Junction and Storage Temperature | TJ,Tstg | -55 to +150 | ||||
| Electrical Characteristics (TA=25 unless otherwise noted) | ||||||
| Collector-Base Breakdown Voltage (IC= 100A, IE=0) | BVCBO | 50 | V | 50 | ||
| Collector-Emitter Breakdown Voltage (IC= 10mA, IB=0) | BVCEO | 50 | V | 50 | ||
| Emitter-Base Breakdown Voltage (IE= 100A, IC=0) | BVEBO | 5 | V | 5 | ||
| Collector-Base Leakage Current (VCB= 30V, IE=0) | ICBO | A | 1 | |||
| Collector-Emitter Leakage Current (VCE=30V,VBE= -0.5V) | ICEX | A | 1 | |||
| Emitter-Base Leakage Current (VEB= 5V, IC=0) | IEBO | A | 1 | |||
| DC Current Gain (VCE= 2V, IC= 200mA) | HFE | 300-500 | 300 | 150 | 500 | |
| DC Current Gain (VCE= 2V, IC= 2000mA) | HFE | |||||
| Collector-Emitter Saturation Voltage (IC= 1500mA,IB= 50mA) | VCE(sat) | 0.25 | V | 0.25 | ||
| Collector-Emitter Saturation Voltage (IC= 2500mA,IB= 150mA) | VCE(sat) | 0.35 | V | 0.35 | ||
| Base-Emitter Saturation Voltage (IC= 2000mA,IB= 100mA) | VBE(sat) | 1.1 | V | 1.1 | ||
| Transition Frequency (VCE= 10V, IC= 50mA) | fT | 150 | MHZ | 150 | ||