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High speed switching medium power PNP transistor LRC S-LBSS5250Y3T1G with AEC Q101 and PPAP capability
High speed switching medium power PNP transistor LRC S-LBSS5250Y3T1G with AEC Q101 and PPAP capability
Specifications
Emitter-Base Voltage(Vebo) :
6V
Current - Collector Cutoff :
1uA
Pd - Power Dissipation :
550mW
Transition frequency(fT) :
320MHz
type :
PNP
Number :
1 PNP
Current - Collector(Ic) :
2A
Collector - Emitter Voltage VCEO :
50V
Operating Temperature :
-55℃~+150℃
Description :
Bipolar (BJT) Transistor PNP 50V 2A 320MHz 550mW Surface Mount SOT-89
Mfr. Part # :
S-LBSS5250Y3T1G
Model Number :
S-LBSS5250Y3T1G
Package :
SOT-89
Description

Product Overview

This document describes the LBSS5250Y3T1G and S-LBSS5250Y3T1G medium power PNP transistors. These transistors offer low saturation voltage and high-speed switching capabilities. The S-prefix variant is qualified for automotive applications, meeting AEC-Q101 standards and PPAP capability. The materials comply with RoHS requirements and are Halogen Free. Primarily used as drivers, these transistors are suitable for various applications requiring efficient switching.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Material Compliance: RoHS, Halogen Free
  • Certifications: AEC-Q101 qualified (S-prefix only), PPAP capable (S-prefix only)

Technical Specifications

ParameterSymbolLBSS5250Y3T1G / S-LBSS5250Y3T1GUnitConditions
CollectorBase VoltageVCBO-50V
CollectorEmitter VoltageVCEO-50V
EmitterBase VoltageVEBO-6V
Collector CurrentIC-2A
Collector Current (Pulse)ICP-4A
Total Device Dissipation (FR-4 Board)PD550mW@ TA = 25C
Derate above 25C225mW/C
Thermal Resistance, JunctiontoAmbientRJA4.4C/W
Junction and Storage TemperatureTJ,Tstg-55 ~ +150C
Collector-emitter breakdown voltageBVCEO-50V(IC = -1mA)
Collector-base breakdown voltageBVCBO-50V(IC = -100A)
Emitter-base breakdown voltageBVEBO-6V(IE = -100A)
Collector Cutoff CurrentICBO-1A(VCB = -50V, IE = 0)
Emitter Cut-off CurrentIEBO-1A(VEB =-4V, IC =0)
DC Current GainHFE180 - 450(VCE = -2V, IC = -50mA)
CollectorEmitter Saturation VoltageVCE(sat)-200 ~ -400mV(IC = -700mA, IB = -35mA)
Transition FrequencyfT320MHz(VCE =-10V, IE =300mA, f=100MHz)
Collector Output CapacitanceCob22pF(VCB =-10V, IE =0A, f=1MHz)

2201121900_LRC-S-LBSS5250Y3T1G_C2941693.pdf

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High speed switching medium power PNP transistor LRC S-LBSS5250Y3T1G with AEC Q101 and PPAP capability

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Product Detail
Emitter-Base Voltage(Vebo) :
6V
Current - Collector Cutoff :
1uA
Pd - Power Dissipation :
550mW
Transition frequency(fT) :
320MHz
type :
PNP
Number :
1 PNP
Contact Supplier
High speed switching medium power PNP transistor LRC S-LBSS5250Y3T1G with AEC Q101 and PPAP capability

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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