Specifications
Emitter-Base Voltage(Vebo) :
5V
Current - Collector Cutoff :
100nA
Pd - Power Dissipation :
550mW
Transition frequency(fT) :
50MHz
type :
PNP
Current - Collector(Ic) :
1A
Collector - Emitter Voltage VCEO :
80V
Operating Temperature :
-65℃~+150℃
Description :
Bipolar (BJT) Transistor PNP 80V 1A 50MHz 550mW Surface Mount SOT-89
Mfr. Part # :
LBTP180Y3T1G
Model Number :
LBTP180Y3T1G
Package :
SOT-89
Description

Product Overview

The LBTP180Y3T1G and S-LBTP180Y3T1G are PNP medium power transistors designed for general purposes and driver stages of audio amplifiers. They offer high current and low voltage capabilities, with the S-prefix variant meeting AEC-Q101 qualification and PPAP capability for automotive applications. These devices comply with RoHS requirements and are Halogen Free.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Material Compliance: RoHS, Halogen Free
  • Certifications: AEC-Q101 qualified (S-prefix), PPAP capable (S-prefix)

Technical Specifications

ParameterSymbolLimitsUnitNotes
Peak base currentIBM-200mA
CollectorBase VoltageVCBO-100V
CollectorEmitter VoltageVCEO-80V
EmitterBase VoltageVEBO-5V
Collector Current(DC)IC-1A
Peak collector currentICM-1.5A
Total Device Dissipation, FR4 BoardPD550mW@ TA = 25C
Derate above 25C225mW/C
Thermal Resistance, JunctiontoAmbientRJA4.4C/W
Thermal Resistance, JunctiontoCaseRJC50C/W
Junction and Storage temperatureTJ,Tstg-65+150C
Collector Cutoff CurrentICBO-100nA(VCB = -30 V,IE = 0)
Collector Cutoff CurrentICBO-250nA(VCB = -30 V,IE = 0,Tj = 125 C)
Emitter Cut-off CurrentIEBO-100nA(VEB =-5V, IC =0)
DC Current GainHFE40-(VCE =-2V, IC =-5mA)
DC Current GainHFE--(VCE =-2V, IC =-150mA)
DC Current GainHFE--(VCE =-2V, IC =-500mA)
CollectorEmitter Saturation VoltageVCE(sat)-500mV(IC = 500 mA, IB = 50 mA)
Base-emitter voltageVBE-1V(IC = 500 mA,VCE = 2 V)
Transition FrequencyfT50MHz(IC = 10 mA,VCE = 5 V,f = 100 MHz)
CollectorEmitter Breakdown VoltageVBR(CEO)-80V(IC = -1 mA, IB = 0)
CollectorBase Breakdown VoltageVBR(CBO)-100V(IC = -100 A, IE = 0)
EmitterBase Breakdown VoltageVBR(EBO)-5V(IE = -100 A, IC = 0)
Collector-Emitter cutoff CurrentICEO-10A(VCE= -80V,IB=0)

2410010403_LRC-LBTP180Y3T1G_C2986742.pdf

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Audio amplifier driver stage transistor LRC LBTP180Y3T1G PNP medium power device for general electronic

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Emitter-Base Voltage(Vebo) :
5V
Current - Collector Cutoff :
100nA
Pd - Power Dissipation :
550mW
Transition frequency(fT) :
50MHz
type :
PNP
Current - Collector(Ic) :
1A
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Audio amplifier driver stage transistor LRC LBTP180Y3T1G PNP medium power device for general electronic

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Employee Number :
300~500
Certification Level :
Verified Supplier
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