Low current, low voltage general purpose amplifier. This is a Silicon NPN transistor in a TO-92 Plastic Package.
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector to Base Voltage (Breakdown) | VCBO | IC=10A, IE=0 | 60 | V | ||
| Collector to Emitter Voltage (Breakdown) | VCEO | IC=1.0mA, IB=0 | 40 | V | ||
| Emitter to Base Voltage (Breakdown) | VEBO | IE=10A, IC=0 | 6.0 | V | ||
| Collector Current - Continuous | IC | 200 | mA | |||
| Collector Power Dissipation | PC | 625 | mW | |||
| Collector Cut-Off Current | ICBO | VCB=50V, IE=0 | 0.05 | A | ||
| Emitter Cut-Off Current | IEBO | VEB=5.0V, IC=0 | 0.05 | A | ||
| DC Current Gain | hFE(1) | VCE=1.0V, IC=10mA | 100 | 300 | ||
| DC Current Gain | hFE(2) | VCE=1.0V, IC=100mA | 30 | |||
| Collector to Emitter Saturation Voltage | VCE(sat) | IC=50mA, IB=5.0mA | 0.3 | V | ||
| Base to Emitter Saturation Voltage | VBE(sat) | IC=50mA, IB=5.0mA | 0.95 | V | ||
| Current Gain Bandwidth Product | fT | IC=10mA, VCE=20V | 300 | MHz | ||
| Output Capacitance | Cob | VCB=5.0V, IE=0, f=1.0MHz | 4.0 | pF | ||
| Turn On Time | Ton | VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA | 0.07 | s | ||
| Turn Off Time | Toff | VCC=3.0V, IC=10mA, IB1=-IB2=1.0mA | 0.25 | s | ||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature Range | Tstg | -55 | 150 |