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Low Saturation NPN Transistor DIODES FMMT624TA Suitable for High Current Applications and DC DC Modules
Low Saturation NPN Transistor DIODES FMMT624TA Suitable for High Current Applications and DC DC Modules
Specifications
Emitter-Base Voltage(Vebo) :
7V
Current - Collector Cutoff :
100nA
Pd - Power Dissipation :
625mW
Transition frequency(fT) :
155MHz
type :
NPN
Number :
1 NPN
Current - Collector(Ic) :
1A
Collector - Emitter Voltage VCEO :
125V
Operating Temperature :
-55℃~+150℃
Description :
Bipolar (BJT) Transistor NPN 125V 1A 155MHz 625mW Surface Mount SOT-23
Mfr. Part # :
FMMT624TA
Model Number :
FMMT624TA
Package :
SOT-23
Description

Product Overview

The FMMT624 is a 125V NPN low saturation transistor designed for high current applications. It offers a high continuous collector current of 1A and a peak pulse current of 3A, with a low equivalent on-resistance (RCE(sat) = 160m). This device is suitable for DC-DC/DC-AC modules, regulators, LED drivers, and CCFL backlighting inverters. It is qualified to AEC-Q101 standards for high reliability and is a "Green" device, being totally lead-free and fully RoHS compliant.

Product Attributes

  • Brand: Diodes Incorporated
  • Package: SOT23
  • Material: Molded plastic, "Green" molding compound
  • Certifications: AEC-Q101, UL Flammability Classification Rating 94V-0, J-STD-020 Moisture Sensitivity Level 1
  • Compliance: Totally Lead-Free & Fully RoHS compliant, Halogen and Antimony Free ("Green" Device)

Technical Specifications

CharacteristicSymbolValueUnitTest Condition
Collector-Base Breakdown VoltageBVCBO125VIC = 100A
Collector-Emitter Breakdown VoltageBVCEO125VIC = 1mA
Emitter-Base Breakdown VoltageBVEBO7VIE = 100A
Collector Cut-off CurrentICBO<10nAVCB = 100V
Emitter Cut-off CurrentIEBO<10nAVEB = 6.0V
Collector Emitter Cut-off CurrentICES<10nAVCES = 100V
Static Forward Current Transfer RatiohFE200 (Typ)-IC = 10mA, VCE = 10V
Static Forward Current Transfer RatiohFE300 (Typ)-IC = 200mA, VCE = 10V
Static Forward Current Transfer RatiohFE140 (Typ)-IC = 1A, VCE = 10V
Static Forward Current Transfer RatiohFE18 (Typ)-IC = 3A, VCE = 10V
Collector-Emitter Saturation VoltageVCE(sat)26 (Typ)mVIC = 0.1A, IB = 10mA
Collector-Emitter Saturation VoltageVCE(sat)70 (Typ)mVIC = 0.5A, IB = 50mA
Collector-Emitter Saturation VoltageVCE(sat)160 (Typ)mVIC = 0.5A, IB = 10mA
Collector-Emitter Saturation VoltageVCE(sat)165 (Typ)mVIC = 1A, IB = 50mA
Base-Emitter Saturation VoltageVBE(sat)0.85 (Typ)VIC = 1A, IB = 50mA
Base-Emitter VoltageVBE(on)0.70 (Typ)VIC = 1A, VCE = 10V
Transition FrequencyfT100 (Min)MHzIC = 50mA, VCE = 10V, f = 100MHz
Collector Output CapacitanceCobo7 (Typ)pFVCB = 10V, f = 1MHz
Turn-On Timet(on)60 (Typ)nsVCC = 50V, IC = 0.5A, IB1 = -IB2 = 50mA
Turn-Off Timet(off)1300 (Typ)nsVCC = 50V, IC = 0.5A, IB1 = -IB2 = 50mA
Continuous Collector CurrentIC1A
Peak Pulse CurrentICM3A(Note 5)
Power DissipationPD625mW(Note 5)
Power DissipationPD806mW(Note 6)
Thermal Resistance, Junction to AmbientRJA200C/W(Note 5)
Thermal Resistance, Junction to AmbientRJA155C/W(Note 6)
Thermal Resistance, Junction to LeadsRJL194C/W(Note 7)
Operating and Storage Temperature RangeTJ, TSTG-55 to +150C
Electrostatic Discharge - Human Body ModelESD HBM4,000VJEDEC Class 3A
Electrostatic Discharge - Machine ModelESD MM 400V

1809081626_DIODES-FMMT624TA_C47297.pdf

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Low Saturation NPN Transistor DIODES FMMT624TA Suitable for High Current Applications and DC DC Modules

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Product Detail
Emitter-Base Voltage(Vebo) :
7V
Current - Collector Cutoff :
100nA
Pd - Power Dissipation :
625mW
Transition frequency(fT) :
155MHz
type :
NPN
Number :
1 NPN
Contact Supplier
Low Saturation NPN Transistor DIODES FMMT624TA Suitable for High Current Applications and DC DC Modules

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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