Specifications
Emitter-Base Voltage(Vebo) :
5V
Current - Collector Cutoff :
50uA
Pd - Power Dissipation :
300mW
Transition frequency(fT) :
300MHz
type :
PNP
Current - Collector(Ic) :
200mA
Collector - Emitter Voltage VCEO :
150V
Operating Temperature :
-55℃~+150℃
Description :
Bipolar (BJT) Transistor PNP 150V 200mA 300MHz 300mW Surface Mount SOT-26(SC74R)
Mfr. Part # :
DMMT5401-7-F
Model Number :
DMMT5401-7-F
Package :
SOT-26(SC74R)
Description

Product Overview

The DMMT5401 is a 150V dual PNP small signal surface mount transistor designed for medium power amplification and switching applications. It offers 2% matched tolerance for hFE, VCE(SAT), and VBE(SAT), providing excellent performance consistency. Housed in a compact SOT26 (SC74R) package, it occupies half the footprint of two individual SOT23 transistors, making it ideal for space-constrained designs. This device features an epitaxial planar die construction and is manufactured using a "Green" molding compound, making it totally lead-free, fully RoHS compliant, and halogen and antimony free.

Product Attributes

  • Brand: Diodes Incorporated
  • Package: SOT26 (SC74R)
  • Material: Molded Plastic ("Green" Molding Compound)
  • Certifications: Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device)
  • Moisture Sensitivity: Level 1 per J-STD-020

Technical Specifications

CharacteristicSymbolValueUnitTest Condition
Maximum Ratings
Collector-Base VoltageVCBO-160V
Collector-Emitter VoltageVCEO-150V
Emitter-Base VoltageVEBO-5.0V
Continuous Collector CurrentIC-200mA
Thermal Characteristics
Power DissipationPD300mW(@TA = +25C, Note 5 & 6)
Thermal Resistance, Junction to AmbientRJA417C/W(Note 6)
Operating and Storage Temperature RangeTJ, TSTG-55 to +150C
Electrical Characteristics
Collector-Base Breakdown VoltageBVCBO-160VIC = -100A, IE = 0
Collector-Emitter Breakdown VoltageBVCEO-150VIC = -1mA, IB = 0
Emitter-Base Breakdown VoltageBVEBO-5VIE = -10A, IC = 0
Collector-Base Cutoff CurrentICBO-50nA / AVCB = -120V, IE = 0 (TA = +100C)
Emitter-Base Cutoff CurrentIEBO-50nAVEB = -3V, IB = 0
DC Current GainhFE50 - 240IC = -1mA, VCE = -5V; IC = -10mA, VCE = -5V; IC = -50mA, VCE = -5V (Note 8)
Collector-Emitter Saturation VoltageVCE(SAT)-0.2 / -0.5VIC = -10mA, IB = -1mA; IC = -50mA, IB = -5mA
Base-Emitter Saturation VoltageVBE(SAT)-1VIC = -10mA, IB = -1mA; IC = -50mA, IB = -5mA
Current Gain-Bandwidth ProductfT100 - 300MHzVCE = -10V, IC = -10mA, f = 100MHz
Output CapacitanceCOBO6pFVCB = -10V, f = 1.0MHz, IE = 0mA
Small Signal Current Gainhfe40 - 200VCE = -10V, IC = -1mA, f = 1.0kHz
Noise FigureNF8dBVCE = -5V, IC = -200A, RS = 10, f = 1.0kHz

1810261910_DIODES-DMMT5401-7-F_C154733.pdf

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Small Signal Dual PNP Transistor DIODES DMMT5401-7-F with Lead Free RoHS Compliant Green Molding Compound

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Emitter-Base Voltage(Vebo) :
5V
Current - Collector Cutoff :
50uA
Pd - Power Dissipation :
300mW
Transition frequency(fT) :
300MHz
type :
PNP
Current - Collector(Ic) :
200mA
Contact Supplier
Small Signal Dual PNP Transistor DIODES DMMT5401-7-F with Lead Free RoHS Compliant Green Molding Compound

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Employee Number :
300~500
Certification Level :
Verified Supplier
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