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power transistor DIODES FMMT591ATA 40V PNP type in SOT23 package for power MOSFET gate drive circuits
power transistor DIODES FMMT591ATA 40V PNP type in SOT23 package for power MOSFET gate drive circuits
Specifications
Emitter-Base Voltage(Vebo) :
7V
Current - Collector Cutoff :
100nA
Pd - Power Dissipation :
500mW
Transition frequency(fT) :
150MHz
type :
PNP
Current - Collector(Ic) :
1A
Collector - Emitter Voltage VCEO :
40V
Operating Temperature :
-55℃~+150℃
Description :
Bipolar (BJT) Transistor PNP 40V 1A 150MHz 500mW Surface Mount SOT-23
Mfr. Part # :
FMMT591ATA
Model Number :
FMMT591ATA
Package :
SOT-23
Description

Product Overview

The FMMT591A is a 40V PNP medium power, high-performance transistor in a SOT23 package. It offers a high continuous collector current of -1A and a peak pulse current of -2A, with a low saturation voltage of less than -500mV at -1A and an equivalent on-resistance of 350m. This device is complementary to the FMMT491A NPN type and is designed for applications such as Power MOSFET gate driving and low loss power switching. It is AEC-Q101 qualified for high reliability and is available in a "Green" device, totally lead-free, and fully RoHS compliant.

Product Attributes

  • Brand: Diodes Incorporated
  • Package: SOT23
  • Material: Molded Plastic, "Green" Molding Compound
  • Certifications: AEC-Q101 Qualified, PPAP Capable, RoHS Compliant, Halogen and Antimony Free ("Green" Device)

Technical Specifications

CharacteristicSymbolValueUnitTest Condition
Collector-Base Breakdown VoltageBVCBO-40VIC = -100A
Collector-Emitter Breakdown VoltageBVCEO-40VIC = -10mA
Emitter-Base Breakdown VoltageBVEBO-7VIE = -100A
Collector Cutoff CurrentICBO-100nAVCB = -30V
Collector-Emitter Cutoff CurrentICES-100nAVCES = -30V
Emitter Cutoff CurrentIEBO-100nAVEB = -5.6V
Collector-Emitter Saturation VoltageVCE(sat)< -500mVIC = -1A, IB = -100mA
Base-Emitter Saturation VoltageVBE(sat)-1.1VIC = -1A, IB = -100mA
Base-Emitter Turn-On VoltageVBE(on)-1.0VIC = -1A, VCE = -5V
Static Forward Current Transfer RatiohFE300IC = -1mA, VCE = -5V
Static Forward Current Transfer RatiohFE250IC = -100mA, VCE = -5V
Static Forward Current Transfer RatiohFE160IC = -500mA, VCE = -5V
Static Forward Current Transfer RatiohFE80IC = -1A, VCE = -5V
Transition FrequencyfT150MHzVCE = -10V, IC = -50mA, f = 100MHz
Output CapacitanceCobo10pFVCB = -10V, f = 1MHz
Delay Timet(d)34.9nsVCC = -10V, IC = -500mA, IB1 = -IB2 =-25mA
Rise Timet(r)19.2nsVCC = -10V, IC = -500mA, IB1 = -IB2 =-25mA
Storage Timet(s)249nsVCC = -10V, IC = -500mA, IB1 = -IB2 =-25mA
Fall Timet(f)62nsVCC = -10V, IC = -500mA, IB1 = -IB2 =-25mA
Power DissipationPD500mW@TA = +25C (Note 6)
Thermal Resistance, Junction to AmbientRJA250C/W@TA = +25C (Note 6)
Thermal Resistance, Junction to LeadRJL197C/W(Note 7)
Operating and Storage Temperature RangeTJ, TSTG-55 to +150C
Electrostatic Discharge - Human Body ModelESD HBM4000VJEDEC Class 3A
Electrostatic Discharge - Machine ModelESD MM400VJEDEC Class C

1912111437_DIODES-FMMT591ATA_C460079.pdf

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power transistor DIODES FMMT591ATA 40V PNP type in SOT23 package for power MOSFET gate drive circuits

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Product Detail
Emitter-Base Voltage(Vebo) :
7V
Current - Collector Cutoff :
100nA
Pd - Power Dissipation :
500mW
Transition frequency(fT) :
150MHz
type :
PNP
Current - Collector(Ic) :
1A
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power transistor DIODES FMMT591ATA 40V PNP type in SOT23 package for power MOSFET gate drive circuits

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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