The BCV47 is an NPN transistor designed for high collector current and high current gain applications. It is suitable for various electronic circuits requiring efficient amplification and switching.
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Voltage | VCBO | 80 | V | |||
| Collector-Emitter Voltage | VCEO | 60 | V | |||
| Emitter-Base Voltage | VEBO | 10 | V | |||
| Collector Current | IC | 500 | mA | |||
| Collector Power Dissipation | PC | 300 | mW | |||
| Thermal Resistance (Junction to Ambient) | RJA | 416 | /W | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | +150 | |||
| Collector-base breakdown voltage | V(BR)CBO | IC=100A, IE=0 | 80 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=10mA, IB=0 | 60 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=10A, IC=0 | 10 | V | ||
| Collector cut-off current | ICBO | VCB=60V, IE=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB=4V, IC=0 | 0.1 | A | ||
| DC current gain | hFE | VCE=1V, IC=100A | 2000 | |||
| VCE=5V, IC=10mA | 4000 | |||||
| VCE=5V, IC=100mA | 10000 | |||||
| VCE=5V, IC=0.5A | 2000 | |||||
| Collector-emitter saturation voltage | VCE(sat) | IC=100mA, IB=0.1mA | 1 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=100mA, IB=0.1mA | 1.5 | V | ||
| Transition frequency | fT | VCE=5V,IC=50mA, f=100MHz | 170 | MHz | ||
| Collector output capacitance | Cob | VCB=10V, IE=0, f=1MHz | 3.5 | pF |