The S9015 is a PNP silicon general-purpose transistor, complementary to the S9014. It is designed for various electronic applications requiring reliable amplification and switching capabilities.
| Characteristic | Symbol | Min | Max | Unit | Conditions |
|---|---|---|---|---|---|
| CollectorEmitter Voltage | VCEO | -45 | Vdc | ||
| CollectorBase Voltage | VCBO | -50 | Vdc | ||
| EmitterBase Voltage | VEBO | -5.0 | Vdc | ||
| Collector Current Continuous | IC | -100 | mAdc | ||
| Total Device Dissipation (FR5 Board) | PD | 200 | mW | (TA = 25C) | |
| Junction and Storage Temperature | TJ,Tstg | 55 | +150 | C | |
| CollectorEmitter Breakdown Voltage | V(BR)CEO | 45 | Vdc | (IC = -0.1 mAdc, IB = 0) | |
| CollectorBase Breakdown Voltage | V(BR)CBO | 50 | Vdc | (IC = -100 Adc, IE = 0) | |
| EmitterBase Breakdown Voltage | V(BR)EBO | 5.0 | Vdc | (IE = -100 Adc, IC = 0) | |
| Collector cut-off current | ICBO | -0.1 | uAdc | (VCB=-50 Vdc, IE = 0) | |
| Emitter cut-off current | IEBO | -0.1 | uAdc | (VEB = -5Vdc, IC = 0) | |
| DC Current Gain | hFE | 200-1000 | (IC =-1.0 mAdc, VCE =-5 Vdc) | ||
| CollectorEmitter Saturation Voltage | VCE(sat) | -0.3 | Vdc | (IC = -100 mAdc, IB = -10 mAdc) | |
| BaseEmitter Saturation Voltage | VBE(sat) | -1.0 | Vdc | (IC = -100 mAdc, IB = -10mAdc) | |
| CurrentGain Bandwidth Product | fT | 150 | MHz | (IC = -10mAdc, VCE= -5.0Vdc, f =30MHz) |