This device is designed for general purpose amplifier applications. It is a dual transistor (NPN+NPN) housed in an SOT-363 package.
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Voltage | VCBO | 50 | V | |||
| Collector-Emitter Voltage | VCEO | 45 | V | |||
| Emitter-Base Voltage | VEBO | 6 | V | |||
| Collector Current-Continuous | IC | 100 | mA | |||
| Power Dissipation | PD | Ta=25 | 200 | mW | ||
| Thermal Resistance. Junction to Ambient | RJA | 625 | /W | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | +150 | |||
| Collector-base breakdown voltage | V(BR)CBO | IC=10A,IE=0 | 50 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA,IB=0 | 45 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=10A,IC=0 | 6 | V | ||
| Collector cut-off current | ICBO | VCB=30V,IE=0 | 15 | nA | ||
| Emitter cut-off current | IEBO | VEB =4V, IC=0 | 15 | nA | ||
| DC current gain* | hFE | VCE=5V,IC=2mA | 200 | 450 | ||
| Collector-emitter saturation voltage | VCE(sat)(1) | IC=10mA,IB=0.5mA | 0.25 | V | ||
| Collector-emitter saturation voltage | VCE(sat)(2) | IC=100mA,IB=5mA | 0.65 | V | ||
| Base-emitter voltage | VBE(1) | VCE=5V,IC=2mA | 0.58 | 0.7 | V | |
| Base-emitter voltage | VBE(2) | VCE=5V,IC=10mA | 0.77 | V | ||
| Transition frequency | fT | VCE=5V,IC=20mA ,f=100MHz | 200 | MHz | ||
| Collector output capacitance | Cob | VCB=10V,IE=0,f=1MHz | 2 | pF |