The PMBT2222A is an NPN epitaxial planar die construction transistor. It features a complementary PNP type available (MMBT2907A). This transistor is suitable for various applications requiring NPN transistor functionality.
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| CollectorBase Voltage | VCBO | IC = 10uA, IE = 0 | 75 | V | ||
| CollectorEmitter Voltage | VCEO | IC = 10 mA, IB = 0 | 40 | V | ||
| EmitterBase Voltage | VEBO | IE = 10uA, IC = 0 | 6 | V | ||
| Collector Current Continuous | IC | 600 | mA | |||
| Collector Power Dissipation | PC | 300 | mW | |||
| Thermal Resistance From Junction To Ambient | RthJA | 417 | /W | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | +150 | |||
| Collector cut-off current | ICEX | VCB = 60V, IE = 0 | 0.01 | uA | ||
| Emitter cut-off current | IEBO | VEB = 3V, IC =0 | 0.01 | uA | ||
| DC current gain | hFE1 | VCE = 30V, VBE(off) =3V | 100 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC = 500mA, IB = 50mA | 0.25 | 1.2 | V | |
| Base-emitter saturation voltage | VBE(sat) | IC = 500mA, IB = 50mA | 0.9 | 1.2 | V | |
| Transition frequency | fT | VCE = 20V, IC = 20mA, f=100MHz | 150 | MHZ | ||
| Delay time | td | VCC = 30V, IC = 150mA Ib1=15mA | 25 | ns | ||
| Rise time | tr | VCC = 30V, IC = 150mA Ib1=15mA | 35 | ns | ||
| Storage time | ts | IC = 150mA, IB1=15mA, IB2= -40mA | 225 | ns | ||
| Fall time | tf | IC = 150mA, IB1=15mA, IB2= -40mA | 60 | ns | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC = 10 mA, IB = 0 | 40 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE = 10uA, IC = 0 | 6 | V | ||
| Collector cut-off current | ICBO | VCB = 60V, IE = 0 | 0.01 | uA | ||
| DC current gain | hFE2 | VCE = 10V, IC = 150mA | 300 | |||
| DC current gain | hFE3 | VCE = 10V, IC = 500mA | 300 |