Specifications
Current - Collector Cutoff :
100nA
Pd - Power Dissipation :
2W
Transition frequency(fT) :
150MHz
type :
NPN
Current - Collector(Ic) :
2A
Collector - Emitter Voltage VCEO :
45V
Operating Temperature :
-55℃~+150℃
Description :
Bipolar (BJT) Transistor NPN 45V 2A 150MHz 2W Surface Mount SOT-89
Mfr. Part # :
FCX690BTA
Model Number :
FCX690BTA
Package :
SOT-89
Description

Product Overview

The FCX690B is a high-gain NPN power transistor designed for various applications requiring robust performance. It features a high continuous collector current of 2A and a peak pulse current of up to 6A, along with a low saturation voltage for efficient operation. This device is AEC-Q101 qualified, ensuring high reliability.

Product Attributes

  • Brand: Diodes Incorporated
  • Product Line: Diodes Incorporated
  • Material: Molded plastic ("Green" molding compound)
  • Certifications: RoHS Compliant, Halogen and Antimony Free ("Green" Device), AEC-Q101 Standards
  • Lead-Free Finish: Yes

Technical Specifications

CharacteristicSymbolLimit/ValueUnitTest Condition
Features
Breakdown Voltage Collector-EmitterBVCEO> 45V
Continuous Collector CurrentIC2A
Peak Pulse CurrentICMup to 6A
High GainhFE> 400@ 1A
Power Dissipation2W
Low Saturation VoltageVCE(sat)< 300mV@ 1A
Maximum Ratings
Collector-Base VoltageVCBO45V@TA = +25C, unless otherwise specified.
Collector-Emitter VoltageVCEO45V@TA = +25C, unless otherwise specified.
Emitter-Base VoltageVEBO7V@TA = +25C, unless otherwise specified.
Continuous Collector CurrentIC2A@TA = +25C, unless otherwise specified.
Peak Pulse CurrentICM6A@TA = +25C, unless otherwise specified.
Base CurrentIB500mA@TA = +25C, unless otherwise specified.
Thermal Characteristics
Power DissipationPD1 (Note 5) / 2 (Note 6)W@TA = +25C, unless otherwise specified.
Thermal Resistance, Junction to Ambient AirRJA125 (Note 5) / 62.5 (Note 6)C/W@TA = +25C, unless otherwise specified.
Thermal Resistance, Junction to LeadsRJL5.31C/W@TA = +25C, unless otherwise specified.
Operating and Storage Temperature RangeTJ, TSTG-55 to +150C
ESD Ratings
Electrostatic Discharge - Human Body ModelESD HBM 8,000VJEDEC Class 3B
Electrostatic Discharge - Machine ModelESD MM 400VJEDEC Class C
Electrical Characteristics
Collector-Base Breakdown VoltageBVCBO45VIC = 100A
Collector-Emitter Breakdown VoltageBVCEO45VIC = 10mA (Note 9)
Emitter-Base Breakdown VoltageBVEBO7VIE = 100A
Collector Cutoff CurrentICBO100nAVCB = 35V
Emitter Cutoff CurrentIEBO100nAVEB = 5.6V
DC current transfer ratio (hFE)hFE500 (IC=100mA, VCE=2V) / 400 (IC=1A, VCE=2V) / 150 (IC=2A, VCE=2V)(Note 9)
Collector-Emitter Saturation VoltageVCE(sat)80 (IC=0.1A, IB=0.5mA) / 300 (IC=1A, IB=5mA)mV(Note 9)
Base-Emitter Saturation VoltageVBE(sat)0.9VIC = 1A, IB = 10mA (Note 9)
Base-Emitter Turn-on VoltageVBE(on)0.85VIC = 1A, VCE = 2V (Note 9)
Transitional FrequencyfT150MHzIC = 50mA, VCE = 5V, f = 50MHz
Input capacitanceCibo200pFVEB = 0.5V, f = 1MHz
Output capacitanceCobo16pFVCB = 10V, f = 1MHz
Switching times (ton)ton33nsIC = 500mA, VCC = 10V, IB1 = -IB2 = 50mA
Switching times (toff)toff1300ns

1912111437_DIODES-FCX690BTA_C460072.pdf

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High Gain NPN Power Transistor DIODES FCX690BTA with 6A Peak Pulse Current and RoHS Compliant Material

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Current - Collector Cutoff :
100nA
Pd - Power Dissipation :
2W
Transition frequency(fT) :
150MHz
type :
NPN
Current - Collector(Ic) :
2A
Collector - Emitter Voltage VCEO :
45V
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High Gain NPN Power Transistor DIODES FCX690BTA with 6A Peak Pulse Current and RoHS Compliant Material

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Employee Number :
300~500
Certification Level :
Verified Supplier
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