This document details the specifications for a PNP transistor, model FMMT720. It outlines the maximum ratings, electrical characteristics, and package information for this component. The transistor is suitable for applications requiring specific voltage and current handling capabilities, as detailed in the technical specifications.
| Symbol | Parameter | Value | Units | Test Conditions |
|---|---|---|---|---|
| MAXIMUM RATINGS (TA=25 unless otherwise noted) | ||||
| VCBO | Collector-Base Voltage | -40 | V | |
| VCEO | Collector-Emitter Voltage | -25 | V | |
| VEBO | Emitter-Base Voltage | -5 | V | |
| IC | Collector Current -Continuous | -1.8 | A | |
| PC | Collector Power Dissipation | 0.3 | W | |
| Tj | Junction Temperature | 150 | ||
| Tstg | Storage Temperature | -55-150 | ||
| ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) | ||||
| V(BR)CBO | Collector-base breakdown voltage | -40 | V | IC=-100A, IE=0 |
| V(BR)CEO | Collector-emitter breakdown voltage | -25 | V | IC=-0.1mA, IB=0 |
| V(BR)EBO | Emitter-base breakdown voltage | -5 | V | IE=-100A, IC=0 |
| ICBO | Collector cut-off current | -0.1 | A | VCB=-40V, IE=0 |
| ICEO | Collector cut-off current | -0.1 | A | VCE=-20V, IB=0 |
| IEBO | Emitter cut-off current | -0.1 | A | VEB=-5V, IC=0 |
| hFE(1) | DC current gain | 200 | VCE=-1V, IC=-100mA | |
| hFE(2) | DC current gain | 350 | VCE=-1V, IC=-100mA | |
| hFE(3) | DC current gain | 40 | VCE=-1V, IC=-800mA | |
| VCE(sat) | Collector-emitter saturation voltage | -0.5 | V | IC=-800mA, IB=-80mA |
| VBE(sat) | Base-emitter saturation voltage | -1.2 | V | IC=-800mA, IB=-80mA |
| VBE(on) | Base-emitter on voltage | -1 | V | IC=-1V, VCE=-10mA |
| VBEF | Base-emitter positive favor voltage | -1.55 | V | IB=-1A |
| fT | Transition frequency | 100 | MHz | VCE= -10V, IC= -50mA, f=30MHz |
| Cob | Output capacitance | 20 | pF | (VCB=-10V,IE=0,f=1MHz) |
Pinout: 1. BASE, 2. EMITTER, 3. COLLECTOR
Package Outline: Plastic surface mounted package; 3 leads SOT-23